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第二期已發表重要論文(摘錄)

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1Ultralow Contact Resistance Between Semimetal And Monolayer SemiconductorsPin-Chun Shen, Cong Su, Yuxuan Lin, Ang-Sheng Chou, Chao-Ching Cheng, Ji-Hoon Park, Ming-Hui Chiu, Ang-Yu Lu, Hao-Ling Tang, Mohammad Mahdi Tavakoli, Gregory Pitner, Xiang Ji, Zhengyang Cai, Nannan Mao, Jiangtao Wang, Vincent Tung, Ju Li, Jeffrey Bokor, Alex Zettl, Chih-I Wu (吳志毅), Tomás Palacios1, Lain-Jong Li, Jing KongNatureVolume 593
2Energy- and Area-Efficient 8T SRAM Cell with FEOL CFETs and BEOL-Compatible TransistorsM. Lee, Z.-Y. Huang, S.-F. Fang, Y.-C. Lu, and V. P.-H. Hu (胡璧合)2022 IEEE International Electron Devices Meeting (IEDM)
3First Demonstration of Monolithic 3D Self-aligned GeSi Channel and Common Gate Complementary FETs by CVD Epitaxy Using Multiple P/N Junction IsolationChien-Te Tu, Yi-Chun Liu, Bo-Wei Huang, Yu-Rui Chen, Wan-Hsuan Hsieh, Chung-En Tsai, Shee-Jier Chueh, Chun-Yi Cheng, Yichen Ma, and C. W. Liu (劉致為)2022 IEEE International Electron Devices Meeting (IEDM)
4Novel Opposite Polarity Cycling Recovery (OPCR) of HfZrO2 Antiferroelectric-RAM with an Access Scheme Toward Unlimited EnduranceK.-Y. Hsiang, Y.-C. Chen, F.-S. Chang, C.-Y. Lin, C.-Y. Liao, Z.-F. Lou, J.-Y. Lee, W.-C. Ray, Z.-X. Li, C.-C. Wang, H.-C. Tseng, P.-H. Chen, J.-H. Tsai, M. H. Liao, T.-H. Hou, C. W. Liu (劉致為), P.-T. Huang, P. Su, and M. H. Lee (李敏鴻)2022 IEEE International Electron Devices Meeting (IEDM)
5Superlattice HfO2-ZrO2 based Ferro-Stack HfZrO2 FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 109 cycles for Multibit NVMC.-Y. Liao, Z.-F. Lou, C.-Y. Lin, A. Senapati, R. Karmakar, K.-Y. Hsiang, Z.-X. Li, W.-C. Ray, J.-Y. Lee, P.-H. Chen, F.-S. Chang, H.-H. Tseng, C.-C. Wang, J.-H. Tsai, Y.-T. Tang, S. T. Chang (張書通), C. W. Liu (劉致為), S. Maikap (麥凱), and M. H. Lee (李敏鴻)2022 IEEE International Electron Devices Meeting (IEDM)
6Interfacial-Layer Design for Hf1-xZrxO2-Based FTJ Devices: From Atom to ArrayH.-L. Chiang, J.-F. Wang, K.-H. Lin, C.-H. Nien, J.-J. Wu, K.-Y. Hsiang, C.-P. Chuu, Y.-W. Chen, X.W. Zhang, C. W. Liu (劉致為), Tahui Wang, C.-C. Wang, M.-H. Lee (李敏鴻), M.-F. Chang, C.-S. Chang, and T.C. Chen2022 Symposia on VLSI Technology and Circuits (VLSI)
7Nearly Ideal Subthreshold Swing and Delay Reduction of Stacked Nanosheets Using Ultrathin BodiesChung-En Tsai, Chun-Yi Cheng, Bo-Wei Huang, Hsin-Cheng Lin, Tao Chou, Chien-Te Tu, Yi-Chun Liu, Sun-Rong Jan, Yu-Rui Chen, Wan-Hsuan Hsieh, Kung-Ying Chiu, Shee-Jier Chueh, and C. W. Liu (劉致為)2022 Symposia on VLSI Technology and Circuits (VLSI)
8Endurance > 1011 Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO2 to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVMC.-Y. Liao, K.-Y. Hsiang, Z.-F. Lou, H.-C. Tseng, C.-Y. Lin, Z.-X. Li, F.-C. Hsieh, C.-C. Wang, F.-S. Chang, W.-C. Ray, Y.-Y. Tseng, S. T. Chang, T.-C. Chen, and M. H. Lee (李敏鴻)2022 Symposia on VLSI Technology and Circuits (VLSI)
9High-Density and High-Speed 4T FinFET SRAM for Cryogenic ComputingV. P.-H. Hu (胡璧合), Chang-Ju Liu, Hung-Li Chiang, Jer-Fu Wang, Chao-Ching Cheng, Tzu-Chiang Chen, and Meng-Fan Chang2021 IEEE International Electron Devices Meeting (IEDM)
10Contact Engineering for High-Performance N-Type 2D Semiconductor TransistorsY. Lin, P.-C. Shen, C. Su, A.-S. Chou, T. Wu, C.-C. Cheng, J.-H. Park, M.-H. Chiu, A.-Y. Lu, H.-L. Tang, M. M. Tavakoli, G. Pitner, X. Ji, C. McGahan, X. Wang, Z. Cai, N. Mao, J. Wang, Y. Wang, W. Tisdale, X. Ling, K. E. Aidala, V. Tung, J. Li1 , A. Zettl, C.-I. Wu(吳志毅), Jing Guo, H. Wang, J. Bokor, T. Palacios, L.-J. Li , J. Kong2021 IEEE International Electron Devices Meeting (IEDM)
11Antimony Semimetal Contact with Enhanced Thermal Stability for High Performance 2DElectronics,A-S Chou, T. Wu, C-C Cheng, S-S Zhan, I-C Ni, S-Y Wang, Y-C Chang, S-L Liew,E.Chen, W-H Chang, C-I Wu (吳志毅), J. Cai, H.-S. Philip Wong and H. Wang2021 IEEE International Electron Devices Meeting (IEDM)
12Highly Stacked 8 Ge0.9Sn0.1 Nanosheet pFETs with Ultrathin Bodies (~3nm) and Thick Bodies (~30nm) Featuring the Respective Record ION/IOFF of 1.4x107 and Record ION of 92μA at VOV=VDS= -0.5V by CVD Epitaxy and Dry EtchingChung-En Tsai, Yi-Chun Liu, Chien-Te Tu, Bo-Wei Huang, Sun-Rong Jan, Yu-Rui Chen, Jyun-Yan Chen, Shee-Jier Chueh, Chun-Yi Cheng, Chia-Jung Tsen, Yichen Ma, and C. W. Liu (劉致為)2021 IEEE International Electron Devices Meeting (IEDM)
13First Demonstration of Interface-Enhanced SAF Enabling 400oC-Robust 42 nm p-SOT-MTJ Cells with STT-Assisted Field-Free Switching and Composite ChannelsYa-Jui Tsou, Kai-Shin Li, Jia-Min Shieh, Wei-Jen Chen, Hsiu-Chih Chen, Yi-Ju Chen, Cho-Lun Hsu, Yao-Min Huang, Fu-Kuo Hsueh, Wen-Hsien Huang, Wen-Kuan Yeh, Huan-Chi Shih, Pang-Chun Liu, C. W. Liu (劉致為), Yu-Shen Yen, Chih-Huang Lai, Jeng-Hua Wei, Denny D. Tang, and Jack Yuan-Chen Sun2021 Symposium on VLSI Technology
14First Highly Stacked Ge0.95Si0.05 nGAAFETs with Record ION = 110 μA (4100 μA/μm) at VOV=VDS=0.5V and High Gm,max = 340 μS (13000 μS/μm) at VDS=0.5V by Wet EtchingYi-Chun Liu, Chien-Te Tu, Chung-En Tsai, Yu-Rui Chen, Jyun-Yan Chen, Sun-Rong Jan, Bo-Wei Huang, Shee-Jier Chueh, Chia-Jung Tsen, and C. W. Liu (劉致為)2021 Symposium on VLSI Technology
15First Demonstration of Multi-VT Stacked Ge0.87Sn0.13 Nanosheets by Dipole-Controlled ALD WNxCy Work Function Metal with Low Resistivity and Thermal Budget ≤ 400 °CChung-En Tsai, Yu-Rui Chen, Chien-Te Tu, Yi-Chun Liu, Jyun-Yan Chen, and C. W. Liu (劉致為) 2021 Symposium on VLSI Technology
16Strain Effects On Rashba Spin-Orbit Coupling Of Two-Dimensional Hole Gases In Gesn/Ge HeterostructuresChia-Tse Tai, Po-Yuan Chiu, Chia-You Liu, Hsiang-Shun Kao, C. T. Harris, T. M. Lu, C. T. Hsieh, S. W. Chang, and Jiun-Yun Li (李峻霣)Advanced MaterialsVolume 33
17Capacitance Matching By Optimizing The Geometry Of A Ferroelectric Hfo2-Based Gate For Voltage AmplificationK.-T. Chen, K.-Y. Hsiang, C.-Y. Liao, S.-H. Chang, F.-C. Hsieh, J.-H. Liu, S.-H. Chiang, H. Liang, S. T. Chang (張書通), M. H. Lee (李敏鴻)Journal of Computational Electronics
18Multibit Ferroelectric Fet Based On Nonidentical Double Hfzro2 For High-Density Nonvolatile MemoryC.-Y. Liao, K.-Y. Hsiang, F.-C. Hsieh, S.-H. Chiang, S.-H. Chang, J.-H. Liu, C.-F. Lou, C.-Y. Lin, T.-C. Chen, C.-S. Chang, and M. H. Lee (李敏鴻)IEEE Electron Device LettersVolume 42
19Sub-7-Nm Textured Zro2 With Giant FerroelectricityKuei-Wen Huang, Sheng-Han Yi, Yu-Sen Jiang, Wei-Chung Ka, Yu-Tung Yin, David Beck, Vladimir Korolkov, Roger Proksch, Jay Shien, Miin-Jang Chen (陳敏璋)Acta MaterialiaVolume 205
20Ferroelectric Undoped-Hfox Capacitor With Symmetric Synaptic For Neural Network AcceleratorJun-Dao Luo, Yu-Ying Lai, Kuo-Yu Hsiang, Chia-Feng Wu, Yun-Tien Yeh, Hao-Tung Chung, Yi-Shao Li, Kai-Chi Chuang, Wei-Shuo Li, Chun-Yu Liao, Pin-Guang Chen, Kuan-Neng Chen, Min-Hung Lee (李敏鴻), and Huang-Chung ChengIEEE Transactions on Electron Devices Volume 68
21Enhanced Electrical Performance Of Van Der Waals HeterostructureLei Xu, Yun-Yuan Wang, Chih-Hsiang Hsiao, I-Chih Ni, Mei-Hsin Chen, and Chih-I Wu (吳志毅)Advanced Materials InterfacesVolume 8
22First Demonstration of Uniform 4-Stacked Ge0.9Sn0.1 Nanosheets with Record ION=78mA at VOV=VDS= -0.5V and Low Noise Using Double Ge0.95Sn0.05 Caps, Dry Etch, Low Channel Doping, and High S/D DopingYu-Shiang Huang, Chung-En Tsai, Chien-Te Tu, Jyun-Yan Chen, Hung-Yu Ye, Fang-Liang Lu, and C. W. Liu (劉致為)2020 IEEE International Electron Devices Meeting (IEDM)
23Operation Bandwidth Of Negative Capacitance Characterized By Frequency Response Of Capacitance Magnification In Ferroelectric/Dielectric StacksYu-Sen Jiang, Yu-En Jeng, Yu-Tung Yin, Kuei-Wen Huang, Teng-Jan Chang, Chin-I Wang, Yu-Ting Chao, Chao-Hsin Wu, and Miin-Jang Chen (陳敏璋)Journal of Materials Chemistry CVolume 9
24Simulation On The Electric Field Effect Of Bi Thin FilmLee-Chi Hong, Cheih Chou, and Hao-Hsiung Lin (林浩雄)Solid State Electronics LettersVolume 2
25Hole Mobility Calculation For Monolayer Molydenum Tungsten Alloy DisulfideMing-Ting Wu, Cheng-Hsien Yang, Yun-Fang Chung, Kuan-Ting Chen, and Shu-Tong Chang (張書通)Journal of Nanoscience and NanotechnologyVolume 20
26Random Polarization Distribution Of Multi-Domain Model For Polycrystalline Ferroelectric Hfzro2K.-T. Chen, C.-Y. Liao, K.-Y. Hsiang, S.-H. Chang, F.-J. Hsieh, H. Liang, S.-H. Chiang, J.-H. Liu, K.-S. Li, S. T. Chang(張書通), and M. H. Lee (李敏鴻)Semiconductor Science and TechnologyVolume 35
27Paraelectric /Antiferroelectric/Ferroelectric Phase Transformation In As-Deposited Zro2 Thin Films By The Tin Capping EngineeringChun-Yuan Wang, Chin-I Wang, Sheng-Han Yi, Teng-Jan Chang, Chun-Yi Chou, Yu-Tung Yin, Makoto Shiojiri, and Miin-Jang Chen (陳敏璋)Materials and DesignVolume 195
28Coupling Sensitivity In Concentric Metal-Insulator-Semiconductor Tunnel Diodes By Controlling The Lateral Injection ElectronsKung-Chu Chen, and Jenn-Gwo Hwu (胡振國)AIP AdvancesVolume 10
29Sub-Nanometer Heating Depth Of Atomic Layer AnnealingWei-Hao Lee, Wei-Chung Kao, Yu-Tung Yin, Sheng-Han Yi, Kuei-Wen Huang, Hsin-Chih Lin, and Miin-Jang Chen (陳敏璋)Applied Surface ScienceVolume 525
30Forming-Free, Nonvolatile, And Flexible Resistive Random-Access Memory Using Bismuth Iodide/Van Der Waals Materials HeterostructuresChia-Shuo Li, Sheng-Wen Kuo, Yu-Tien Wu, Fang-Yu Fu, I-Chih Ni, Mei-Hsin Chen, and Chih-I Wu (吳志毅)Advanced Materials Interfaces Volume 7
31Low Contact Resistivity To Ge Using In-Situ B And Sn Incorporation By Chemical Vapor DepositionChung-En Tsai, Fang-Liang Lu, Yi-Chun Liu, Hung-Yu Ye, and C. W. Liu (劉致為)IEEE Transactions on Electron DevicesVolume 67
32Studies Of 2D Bulk And Nanoribbon Band Structures In Moxw1–Xs2 Alloy System Using Full Sp3D5 Tight‐Binding ModelTsung-Yin Tsai, Pin-Fang Chen, Shu-Wei Chang, and Yuh-Renn Wu (吳育任)Physica Status Solidi (b) Volume 258
33Ferroelectric Hfzro2 With Electrode Engineering And Stimulation Schemes As Symmetric Analog Synaptic Weight Element For Deep Neural Network TrainingK.-Y. Hsiang, C.-Y. Liao, K.-T. Chen, Y.-Y. Lin, C.-Y. Chueh, C. Chang, Y.-J. Tseng, Y.-J. Yang, S. T. Chang(張書通), M.-H. Liao, T.-H. Hou, C.-H. Wu, C.-C. Ho, J.-P. Chiu, C.-S. Chang, and M. H. Lee (李敏鴻)IEEE Transactions on Electron Devices Volume 67
34Optical Detection Of Parasitic Channels Of Vertically Stacked Ge0.98Si0.02 NgaafetsShih-Ya Lin, Hsiao-Hsuan Liu, Chien-Te Tu, Yu-Shiang Huang, Fang-Liang Lu, and C. W. Liu (劉致為)IEEE Transactions on Electron DevicesVolume 67
35Edge-Etched Al2O3 Dielectric As Charge Storage Region In A Coupled Mis Tunnel Diode SensorBo-Jyun Chen and Jenn-Gwo Hwu (胡振國)IEEE Journal of the Electron Devices SocietyVolume 8
36Variational Quantum Circuits For Deep Reinforcement LearningS. Y. Chen, C. H. Yang, J. Qi, P. Chen, X. Ma and H.-S. Goan (管希聖)IEEE AccessVolume 8
37On-Current Enhancement In Treefet By Combining Vertically Stacked Nanosheets And InterbridgesHung-Yu Ye and C. W. Liu (劉致為)IEEE Electron Device LettersVolume 41
38Full-Polaron Master Equation Approach To Dynamical Steady States Of A Driven Two-Level System Beyond The Weak System-Environment CouplingC.-C. Chen, T. M. Stace, and H.-S. Goan (管希聖)Physical Review BVolume 102
39Luminescence Enhancement And Dual-Color Emission Of Stacked Mono-Layer 2D MaterialsPo-Cheng Tsai, Hon-Chin Huang, Chun-Wei Huang, Shoou-Jinn Chang, and Shih-Yen Lin (林時彥)NanotechnologyVolume 31
40High On-Current 2D nFET of 390 μA/μm at VDS = 1V using Monolayer CVD MoS2 without Intentional DopingAng-Sheng Chou, Pin-Chun Shen, Chao-Ching Cheng, Li-Syuan Lu, Wei-Chen Chueh, Ming-Yang Li, Gregory Pitner, Wen-Hao Chang, Chih-I Wu (吳志毅), Jing Kong, Lain-Jong Li, and H.-S. Philip Wong2020 Symposium on VLSI Technology
41First Demonstration of 4-Stacked Ge0.915Sn0.085 Wide Nanosheets by Highly Selective Isotropic Dry Etching with High S/D Doping and Undoped ChannelsYu-Shiang Huang, Fang-Liang Lu, Chien-Te Tu, Jyun-Yan Chen, Chung-En Tsai, Hung-Yu Ye, Yi-Chun Liu and C. W. Liu (劉致為)2020 Symposium on VLSI Technology
42Record Low Contact Resistivity to Ge:B (8.1x10-10Ω-cm2) and GeSn:B (4.1x10-10Ω-cm2) with Optimized [B] and [Sn] by In-situ CVD DopingFang-Liang Lu, Yi-Chun Liu, Chung-En Tsai, Hung-Yu Ye, and C. W. Liu (劉致為)2020 Symposium on VLSI Technology
43Interpretable Neural Network to Model and to Reduce Self-Heating of FinFET CircuitryChia-Che Chung, Hsin-Cheng Lin, H. H. Lin, W. K. Wan, M.-T. Yang, and C. W. Liu (劉致為)2020 Symposium on VLSI Technology
44Analysis And Optimization Of Gan Based Multi-Channels FinfetsChun-Lin Yu, Chih-Hao Lin, and Yuh-Renn Wu (吳育任)IEEE Transactions on NanotechnologyVolume 19
45Prolonged Transient Behavior In Ultra-Thin Oxide Mis-Tunneling Diode Induced By Deep Depletion Of Surrounded Coupling ElectrodeTing-Hao Hsu and Jenn-Gwo Hwu (胡振國)IEEE Transactions on Electron DevicesVolume 67
46Improved Low-Voltage Sensing Performance In Mis(P) Tunnel Diodes By Oxide Thickening At The Gate FringeKuan-Wun Lin and Jenn-Gwo Hwu (胡振國)IEEE Transactions on Electron DevicesVolume 67
47Tungsten Diselenide Top-Gate Transistors With Multilayer Antimonene Electrodes: Gate Stacks And Epitaxially Grown 2D Material HeterostructuresYu-Wei Zhang, Jun-Yan Li, Chao-Hsin Wu (吳肇欣), Chiao-Yun Chang, Shu-Wei Chang (張書維), Min-Hsiung Shih and Shih-Yen Lin (林時彥)Scientific ReportsVolume 10
48Atomic Layer Densification Of Aln Passivation Layer On Epitaxial Ge For Enhancement Of Reliability And Electrical Performance Of High-K Gate StacksChin-I Wang, Teng-Jan Chang, Yu-Tung Yin, Yu-Sen Jiang, Jing-Jong Shyue and Miin-Jang Chen (陳敏璋)ACS Applied Electronic MaterialsVolume 2
49Ultra-Low Subthreshold Swing In Gated Mis(P) Tunnel Diodes With Engineered Oxide Local Thinning LayersTzu-Hao Chiang and Jenn-Gwo Hwu (胡振國)IEEE Transactions on Electron DevicesVolume 67
50Correlation Between Ferroelectricity And Nitrogen Incorporation Of Undoped Hafnium Dioxide CapacitorJun-Dao Luo, Yun-Tien Yeh, Yu-Ying Lai, Chia-Feng Wu, Hao-Tung Chung, Yi-Shao Li, Kai-Chi Chuang, Wei-Shuo Li, Pin-Guang Chen, Min-Hung Lee (李敏鴻), and Huang-Chung ChengVacuumVolume 176
51Van Der Waals Epitaxy Of Large-Area And Single-Crystalline Gold Films On Mos2 For Low-Contact-Resistance 2D-3D InterfacesKuan-Chao Chen, Syuan-Miao Lai, Bo-Yu Wu, Chi Chen, and Shih-Yen Lin (林時彥)ACS Applied Nano Materials Volume 3
52Size-Dependent Switching Properties Of Spin-Orbit Torque Mram With Manufacturing-Friendly 8-Inch Wafer-Level UniformitySk Ziaur Rahaman, I-Jung Wang, Ding-Yeong Wang, Chi-Feng Pai, Yu-Chen Hsin, Shan-Yi Yang, Hsin-Han Lee, Yao-Jen Chang, Yi-Ching Kuo, Yi-Hui Su, Guan-Long Chen, Fang-Ming Chen, Jeng-Hua Wei, Tuo-Hung Hou, Shyh-Shyuan Sheu, Chih-I Wu (吳志毅), and Duan-Lee DengIEEE Journal of the Electron Devices Society Volume 8
53Thermoelectric Transport Of The Half-Filled Lowest Landau Level In A P-Type Ge/Sige HeterostructureXiaoxue Liu, Tzu-Ming Lu, Charles Thomas Harris, Fang-Liang Lu, Chia-You Liu, Jiun-Yun Li, C. W. Liu (劉致為) and Rui-Rui DuPhysical Review BVolume 101
54Low- Temperature Crystallization And Paraelectric-Ferroelectric Phase Transformation In Nanoscale Zro2 Thin Films Induced By Atomic Layer Plasma TreatmentSheng-Han Yi, Kuei-Wen Huang, Hsin-Chih Lin and Miin-Jang Chen (陳敏璋)Journal of Materials Chemistry CVolume 8
55Topological Transition In A 3Nm Thick Al Film Grown By Molecular Beam EpitaxyAnkit Kumar,Guan-Ming Su, Chau-Shing Chang, Ching-Chen Yeh, Bi-Yi Wu, Dinesh K. Patel, Yen-Ting Fan, Sheng-Di Lin, Lee Chow, and Chi-Te Liang (梁啟德)Journal of NanomaterialsVolume 2019
56Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf0.25Zr0.75O2 Negative Capacitance FETsM. H. Lee (李敏鴻), K.-T. Chen, C.-Y. Liao, G.-Y. Siang, C. Lo, H.-Y. Chen, Y.-J. Tseng, C.-Y. Chueh, C. Chang, Y.-Y. Lin, Y.-J. Yang, F.-C. Hsieh, S. T. Chang (張書通), M.-H. Liao, K.-S. Li, and C. W. Liu (劉致為)2019 IEEE International Electron Devices Meeting (IEDM)
57First Vertically Stacked Tensily Strained Ge0.98Si0.02 nGAAFETs with No Parasitic Channel and LG = 40 nm Featuring Record ION = 48 mA at VOV=VDS=0.5V and Record Gm,max (mS/m)/SSSAT(mV/dec) = 8.3 at VDS=0.5VChien-Te Tu, Yu-Shiang Huang, Fang-Liang Lu, Hsiao-Hsuan Liu, Chung-Yi Lin, Yi-Chun Liu, and C. W. Liu (劉致為)2019 IEEE International Electron Devices Meeting (IEDM)
58First Stacked Ge0.88Sn0.12 pGAAFETs with Cap, LG=40nm, Compressive Strain of 3.3%, and High S/D Doping by CVD Epitaxy Featuring Record ION of 58mA at VOV=VDS= -0.5V, Record Gm,max of 172mS at VDS= -0.5V, and Low NoiseYu-Shiang Huang, Chung-En Tsai, Chien-Te Tu, Hung-Yu Ye, Yi-Chun Liu, Fang-Liang Lu, and C. W. Liu (劉致為)2019 IEEE International Electron Devices Meeting (IEDM)
59Different Infrared Responses From The Stacked Channels And Parasitic Channel Of Stacked Gesn Channel TransistorsHisao-Hsuan Liu, Yu-Shiang Huang, Fang-Liang Lu, Hung-Yu Ye, and C. W. Liu (劉致為)IEEE Electron Device LettersVolume 41
60Self-Heating Induced Interchannel Vt Difference Of Vertically Stacked Si Nanosheet Gate-All-Around MosfetsChia-Che Chung, Hung-Yu Ye, H. H. Lin, W. K. Wan, M.-T. Yang, and C. W. Liu (劉致為)IEEE Electron Device LettersVolume 40
61Carrier Mobility Calculation For Monolayer Black PhosphorousKuan-Ting Chen, Min-Hsin Hsieh, Yen-Shuo Su, Wen-Jay Lee, and Shu-Tong Chang (張書通)Journal of Nanoscience and NanotechnologyVolume 19
62Multi-Layer Elemental 2D Materials: Antimonene, Germanene And Stanene Grown Directly On Molybdenum DisulfidesKuan-Chao Chen, Lun-Ming Lee, Hsuan-An Chen, Hsu Sun, Cheng-Lun Wu, Hsin-An Chen, Kuan-Bo Lin, Yen-Chun Tseng, Chao-Cheng Kaun, Chun-Wei Pao, and Shih-Yen Lin (林時彥)Semiconductor Science and Technology Volume 34
63Non-Markovianity, Information Backflow, And System-Environment CorrelationYun-Yi Hsieh, Zheng-Yao Su, and Hsi-Sheng Goan (管希聖)Physical Review AVolume 100
64Evaluation Of Sweep Modes For Switch Response On Ferroelectric Negative Capacitance FetsKuan-Ting Chen, Yu-Chen Chou, Gao-Yu Siang, Hong-Yu Chen, Chieh Lo, Chun-Yu Liao, Shu-Tong Chang (張書通), and Min-Hung Lee (李敏鴻)Applied Physics ExpressVolume 12
65Low-Temperature Conformal Atomic Layer Etching Of Si With A Damage-Free Surface For Next Generation Atomic-Scale ElectronicPo-Hsien Cheng, Chin-I Wang, Chen-Hsiang Ling, Chen-Hsuan Lu, Yu-Tung Yin, Miin-Jang Chen(陳敏璋)ACS Applied Nano MaterialsVolume 2
66First Vertically Stacked, Compressively Strained, and Triangular Ge0.91Sn0.09 pGAAFETs with High ION of 19.3uA at VOV=VDS=-0.5V, Gm of 50.2uS at VDS=-0.5V and Low SSlin of 84mV/dec by CVD Epitaxy and Orientation Dependent Etching Yu-Shiang Huang, Hung-Yu Ye, Fang-Liang Lu, Yi-Chun Liu, Chien-Te Tu, Chung-Yi Lin, Shih-Ya Lin, Sun-Rong Jan, and C. W. Liu (劉致為)2019 Symposium on VLSI Technology
67Record Low Contact Resistivity (4.4x10-10Ω-cm2) to Ge Using In-situ B and Sn Incorporation by CVD With Low Thermal Budget (≤400℃) and Without GaFang-Liang Lu, Chung-En Tsai, Chih-Hsiung Huang, Hung-Yu Ye, Shih-Ya Lin, and C. W. Liu (劉致為)2019 Symposium on VLSI Technology
68Thermal Spice Modeling Of Finfet And Beol Considering Frequency-Dependent Transient Response, 3-D Heat Flow, Boundary/Alloy Scattering, And Interfacial Thermal ResistanceC.-C. Chung, H. H. Lin, W. K. Wan, M.-T. Yang, and C. W. Liu (劉致為)IEEE Transactions on Electron DevicesVolume 66
69Roles Of Inner And Outer Fringe And Asymmetric Coupling Effect In Concentric Double-Mis(P) Tunneling DiodesYu-Hsuan Chen and Jenn-Gwo Hwu (胡振國)ECS TransactionsVolume 89
70High-Fidelity And Robust Two-Qubit Gates For Quantum-Dot Spin Qubits In SiliconC.-H. Huang, C. H. Yang, C.-C. Chen, A. S. Dzurak, and H.-S. Goan (管希聖)Physical Review AVolume 99
71Negative Capacitance From The Inductance Of Ferroelectric SwitchingPo-Hsien Cheng, Yu-Tung Yin, I-Na Tsai, Chen-Hsuan Lu, Lain-Jong Li, Samuel C. Pan, Jay Shieh, Makoto Shiojiri, and Miin-Jang Chen (陳敏璋)Nature Communications PhysicsVolume 2
72Single And Double Hole Quantum Dots In Strained Ge/Sige Quantum WellsW. J. Hardy, C. T. Harris, Y. H. Su, Y. Chuang, J. Moussa, L. N. Maurer, Jiun-Yun Li (李峻霣), T. M. Lu, and D. R. LuhmanNanotechnologyVolume 30
73The Atomic Layer Etching Mechanisms Of Molybdenum Disulfides By Using Oxygen PlasmaKuan-Chao Chen, Chia-Wei Liu, Chi Chen and Shih-Yen Lin (林時彥)Semiconductor Science and Technology Volume 34
74Quantum Phase Transition In Ultrahigh Mobility Sige/Si/Sige Two-Dimensional Electron SystemM. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov, Amy Y. X. Zhu, S. V. Kravchenko, S.-H. Huang, and C. W. Liu (劉致為)Physical Review BVolume 99
75Non-Volatile Ferroelectric Fets Using 5-Nm Hf0.5Zr0.5O2 With High Data Retention And Read Endurance For 1T Memory ApplicationsK.-T. Chen, R.-C. Hong, C.-Y. Liao, H.-Y. Chen, S.-S. Gu, Z.-Y. Wang, Y.-C. Chou, S.-Y. Chen, G.-Y. Siang, J. Le, M.-H. Liao, K.-S. Li, S. T. Chang(張書通), and M. H. Lee (李敏鴻)IEEE Electron Device LettersVolume 40
76Electron Mobility Enhancement In An Undoped Si/Sige Heterostructure By Remote Carrier ScreeningY. H. Su, K. Y. Chou, Y. Chuang, T. M. Lu, and Jiun-Yun Li (李峻霣)Journal of Applied PhysicsVolume 125
77Photoresponse Of Homostructure Wse2 Rectifying DiodeT. H. Peng, C. H. Hong, M. R. Tang, and S. C. Lee (李嗣涔)AIP Advances Volume 9
78Effects Of Annealing Temperature And Nitrogen Content On Effective Work Function Of Tungsten NitrideChih-Hsiung Huang, Chung-En Tsai, Yu-Rui Chen, and C. W. Liu (劉致為)IEEE Electron Device LettersVolume 40
79Two Capacitance States Memory Characteristic In Metal-Oxide-Semiconductor (Mos) Structure Controlled By An Outer Mos Gate RingHao-Jyun Li, Chang-Feng Yang and Jenn-Gwo Hwu (胡振國)IEEE Transactions on Electron DevicesVolume 66
80Gate Oxide Local Thinning Mechanism Induced Sub-60 Mv/Decade Subthreshold Swing On Charge-Coupled Mis(P) Tunnel TransistorChang-Feng Yang , Bo-Jyun Chen, Wei-Chen Chen, Kuan-Wun Lin, and Jenn-Gwo Hwu (胡振國)IEEE Transactions on Electron DevicesVolume 66
81Enhanced Two States Current In Mos-Gated Mis Separate Write/Read Storage Device By Oxide Soft Breakdown In Remote GateWei-Chen Chen, Chang-Feng Yang and Jenn-Gwo Hwu (胡振國)IEEE Transactions on NanotechnologyVolume 18
82Mobility Calculation Of Ge Nanowire Junctionless And Inversion-Mode Nanowire Nfets With Size And Shape DependenceHung-Yu Ye, Chia-Che Chung, and C. W. Liu (劉致為)IEEE Transactions on Electron DevicesVolume 65
83Black Phosphorus With A Unique Rectangular Shape And Its Anisotropic PropertiesY. Hsiao, P. Y. Chang, K. L. Fan, N. C. Hsu, and S. C. Lee (李嗣涔)AIP AdvancesVolume 8
843D Self-Consistent Quantum Transport Simulation For Gaas Gate-All-Around Nanowire Field-Effect Transistor With Elastic And Inelastic Scattering EffectsHan-Wei Hsiao and Yuh-Renn Wu (吳育任)Physica Status Solidi (a) Volume 216
85Current Enhancement And Bipolar Current Modulation Of Top-Gate Transistors Based On Monolayer Mos2 On Three-Layer Wxmo1-Xs2Kuan-Chao Chen, Cing-Yu Jian, Yi-Jia Chen, Si-Chen Lee, Shu-Wei Chang (張書維), and Shih-Yen Lin (林時彥)ACS Applied Materials & InterfacesVolume 10