| 1 | Study on The Transient Behaviors of Concentric MIS Tunneling Diodes by Rapid Voltage Switching at Ring/Center and Read at Center/Ring | Chi-Yi Kao, Sung-Wei Huang, and Jenn-Gwo Hwu (胡振國) | IEEE Transactions on Electron Devices | Volume 72 |
| 2 | Ultra-high remnant polarization in wake-up-free ferroelectric thin films realized by atomic layer annealing | Chi-Lin Mo, Hsin-Chih Lin, Miin-Jang Chen (陳敏璋) | Acta Materialia | Volume 288 |
| 3 | Dielectric-Free Molybdenum Disulfide Transistors with In-plane Gates | Che-Jia Chang, Shih-Jie Chen, Tzu-Hsuan Chang (張子璿), Po-Tsung Lee, Shu-Wei Chang, and Shih-Yen Lin (林時彥) | ACS Applied Materials & Interfaces | Volume 17 |
| 4 | High-quality HfO2 high-K gate dielectrics deposited on highly oriented pyrolytic graphite via enhanced precursor atomic layer seeding | Yu-Tung Yin, Chin-Chao Huang, Po-Hao Chiu, Yu-Sen Jiang, Ju-Yu Hoo, Miin-Jang Chen (陳敏璋) | ACS Applied Electronic Materials | Volume 7 |
| 5 | Alternating multi-pulse atomic layer deposition for dopant tailoring in sub-10 nm ferroelectric thin films | Ting-Yun Wang, Chun-Ho Chuang, Chi-Lin Mo, Yu-Sen Jiang, Jing-Jong Shyue, Jay Shieh, Miin-Jang Chen (陳敏璋) | Materials Today Chemistry | Volume 43 |
| 6 | Probing Hf0.5Zr0.5O2 ferroelectricity: neutron reflectivity reveals critical interface effects | Hsing-Yang Chen, Chi-Lin Mo, Jing-Jong Shyue, Tzu-Yen Huang, Miin-Jang Chen (陳敏璋) | ACS Applied Materials & Interfaces | Volume 17 |
| 7 | Nonvolatile and Volatile Memory Fusion of Antiferroelectric-like Hafnium−Zirconium Oxide for Multi-Bit Access and Endurance >1012 Cycles by Alternating Polarity Cycling Recovery and Spatially Resolved Evolution | Cheng-Hong Liu, Kuo-Yu Hsiang, Zhi-Xian Li, Fu-Sheng Chang, Zhao-Feng Lou, Jia-Yang Lee, Chee Wee Liu, Pin Su, Tuo-Hung Hou, and Min-Hung Lee (李敏鴻) | ACS Applied Materials & Interfaces | Volume 17 |
| 8 | Polariton-Mediated Ultrafast Energy Transfer in a van der Waals Superlattice | Tzu-Yu Peng, Jason Lynch, Jing-Wei Yang, Yen-Yu Wang, Xing-Hao Lee, Ben R. Conran, Clifford McAleese, Deep Jariwala, Yu-Jung Lu (呂宥蓉) | ACS Nano | Volume 19 |
| 9 | High-Performance Transistors with Polycrystalline 2D Material Channels: The Influence of Gold Electrode Crystallinity and the Layer Number of Molybdenum Disulfide Channels | Che-Jia Chang, Pei-Zhi Huang, Kuan-Bo Lin, Tzu-Hsuan Chang (張子璿), Wei-Chen Tu, Chao-Cheng Kaun, and Shih-Yen Lin (林時彥) | Applied Surface Science | Volume 693 |
| 10 | Control of Current Polarity in Concentric Metal-Insulator-Semiconductor Tunnel Diode (MISTD) Structures by Designed Coupling Rings | Tai-Ming Kung and Jenn-Gwo Hwu (胡振國) | Applied Physics A | Volume 131 |
| 11 | Ferroelastic Domain Switching and Time-Resolved Negative Capacitance in Polar-Axis-Oriented Hf0.5Zr0.5O2 Grown by Atomic Layer Epitaxy | Yu-Sen Jiang, Wei-En Lin, Makoto Shiojiri, Yu-Tung Yin, Yu-Cheng Su, Chih-Hung Nien, Chen-Feng Hsu, Vincent Duen-Huei Hou, Chih-Sheng Chang, Iuliana Radu, Miin-Jang Chen (陳敏璋) | Small | Volume 21 |
| 12 | Identical Pulse with Opposite Polarity Assistance Detrapping─Arithmetic Progression (OPAD-AP) to Ideal Potentiation of FeFET for Synapse | Z.-F. Lou, C.-Y. Liao, K.-Y. Hsiang, Z.-H. Li, S.-H. Chang, T.-C. Chen and M. H. Lee (李敏鴻) | IEEE Transactions on Electron Devices | Volume 71 |
| 13 | Super-lamination HZO/ZrO2/HZO of Ferroelectric Memcapacitors with Morphotropic Phase Boundary (MPB) for High Capacitive Ratio and Non-destructive Readout | Z.-F. Lou, B.-R. Chen, K.-Y. Hsiang, Y.-T. Chang, C.-H. Liu, H.-C. Tseng, H.-T. Liao, P. Su, and M. H. Lee (李敏鴻) | IEEE Electron Device Letters | Volume 45 |
| 14 | Advancing vapor pressure prediction: A machine learning approach with directed message passing neural networks | Yen-Hsiang Lin, Hsin-Hao Liang, Shiang-Tai Lin,Yi-Pei Li (李奕霈) | Journal of the Taiwan Institute of Chemical Engineers | |
| 15 | Low-Power CMOS Inverter with Enhancement-mode Operation and Matched VTH at VDD = 1 V on Monolayer 2D Material Channel | Ang-Sheng Chou, Ching-Hao Hsu, Yu-Tung Lin, Fa-Rong Hou, Edward Chen, Po-Sen Mao, Ming-Yang Li, Sui-An Chou, Dawei Heh, Hsiang-Chi Hu, Yu-Sung Chang, Wen-Chia Wu, Zih-Syuan Huang, Yu-Wei Hsu, Yuan-Chun Su, Terry Y.T. Hung, Po-Hsun Ho, Tsung-En Lee, Chen-Feng Hsu, Goutham Arutchelvan, Yun-Yan Chung, Chao-Hsin Chien, Georgios Vellianitis, Wei-Yen Woon, Jin Cai, Mark van Dal, Wen-Hao Chang, Chih-I Wu (吳志毅), Chao-Ching Cheng, and Iuliana P. Radu | 2024 International Electron Device Meeting (IEDM) | |
| 16 | Conflict-Free and Area-Efficient 4N4P CFET 8T SRAM with Double-Sided Signal Routing for Multibit Compute-in-Memory in AI Edge Devices | Y.-C. Lu, M.-L. Wu, and V. P.-H. Hu (胡璧合) | 2024 International Electron Device Meeting (IEDM) | |
| 17 | Energy Material for Extreme Environment: Unveiling Novel Self-Resilience of Hf1-xZrxO2 for Electrostatic Energy Storage (EES) and Pyroelectric Energy Harvesting (PEH) | C.-H. Liu, K.-Y. Hsiang, F.-S. Chang, Y.-T. Chang, C. W. Liu, and M. H. Lee (李敏鴻) | 2024 International Electron Device Meeting (IEDM) | |
| 18 | Recent progress in undoped group-IV heterostructures for quantum technologies | Chia-Tse Tai and Jiun-Yun Li (李峻霣) | Materials for Quantum Technology | Volume 4 |
| 19 | Study and Optimization of Two-State Transient Currents at Millisecond Time Scales in MIS Tunnel Diodes | Sung-Wei Huang and Jenn-Gwo Hwu (胡振國) | IEEE Transactions on Electron Devices | Volume 70 |
| 20 | Improved Scalability of Negative Capacitance Junctionless Transistors with Underlap Design | M. Gupta and V. P.-H. Hu (胡璧合) | IEEE Transactions on Electron Devices | Volume 70 |
| 21 | Fatigue Mechanism of Antiferroelectric Hf0.1Zr0.9O2 Toward Endurance Immunity by Opposite Polarity Cycling Recovery (OPCR) for eDRAM | K.-Y. Hsiang, J.-Y. Lee, Z.-F. Lou, F.-S. Chang, Y.-C. Chen, Z.-X. Li, M. H. Liao, C. W. Liu, T.-H. Hou, P. Su, and M. H. Lee (李敏鴻) | IEEE Transactions on Electron Devices | Volume 70 |
| 22 | Three-Level MIS Antifuse Formed by Polarity-Dependent Dielectric Breakdown on 3.5 nm SiO2 for One-Time Programmable Application | Sung-Wei Huang and Jenn-Gwo Hwu (胡振國) | IEEE Transactions on Electron Devices | Volume 70 |
| 23 | Atomic layer engineering on resistive switching in sub-4 nm AlN resistive random access memory | Chen-Hsiang Ling, Chi-Lin Mo, Chun-Ho Chuang, Jing-Jong Shyue, and Miin-Jang Chen(陳敏璋) | Journal of Materials Chemistry C | |
| 24 | Impact of monolayer engineering on ferroelectricity of sub-5 nm Hf0.5Zr0.5O2 thin films | Ting-Yun Wang, Chi-Lin Mo, Chun-Yi Chou, Chun-Ho Chuang, and Miin-Jang Chen(陳敏璋) | Acta Materialia | Volume 250 |
| 25 | Wake-up-free ferroelectric Hf0.5Zr0.5O2 thin films characterized by precession electron diffraction | Teng-Jan Chang, Hsing-Yang Chen, Chin-I Wang, Hsin-Chih Lin, Chen-Feng Hsu, Jer-Fu Wang, Chih-Hung Nien, Chih-Sheng Chang, Iuliana P. Radu, and Miin-Jang Chen(陳敏璋) | Acta Materialia | Volume 246 |
| 26 | Inhibitor-Free Area-Selective Atomic Layer Deposition with Feature Size Down to Nearly 10 nm | Chun-Yi Chou, Chi-Lin Mo, Chih-Piao Chuu, Ting-Yun Wang, Chin-Chao Huang, Cheng-Hung Hou, Chun-Ho Chuang, Yu-Sen Jiang, Jing-Jong Shyue, and Miin-Jang Chen(陳敏璋) | Chemistry of Materials | Volume 35 |
| 27 | Room-Temperature Negative Differential Resistance and High Tunneling Current Density in GeSn Esaki Diodes | Chia-You Liu, Kai-Ying Tien, Po-Yuan Chiu, Yu-Jui Wu, Yen Chuang, Hsiang-Shun Kao, and Jiun-Yun Li (李峻霣) | Advanced Materials | Volume 34 |
| 28 | Dielectric Layer Design of Bilayer Ferroelectric and Antiferroelectric Tunneling Junctions Toward 3D NAND-Compatible Architecture | K.-Y. Hsiang, C.-Y. Liao, J.-H. Liu, C.-Y. Lin, J.-Y. Lee, Z.-F. Lou, F.-S. Chang, W.-C. Ray, Z.-X. Li, H.-C. Tseng, C.-C. Wang, M. H. Liao, T.-H. Hou, and M. H. Lee (李敏鴻) | IEEE Electron Device Letter | Volume 43 |
| 29 | Mechanisms of instability retention for ferroelectric field effect transistors with HfZrO2 gate stack scaling down | Chun-Yu Liao, Chen-Ying Lin, Zhi-Xian Li, Kuo-Yu Hsiang, Zhao-Feng Lou, Vita Pi-Ho Hu(胡璧合), and Min-Hung Lee (李敏鴻) | Applied Physics Letters | Volume 121 |
| 30 | Ferroelectric ZrO2 ultrathin films on silicon for metal-ferroelectric-semiconductor capacitors and transistors | Yu-Sen Jiang, Kuei-Wen Huang, Sheng-Han Yi, Chin-I Wang, Teng-Jan Chang, Wei-Chung Kao, Chun-Yuan Wang, Yu-Tung Yin, Jay Shieh, Miin-Jang Chen (陳敏璋) | 2022 Journal of the European Ceramic Society | Volume 42 |
| 31 | Improved Two States Characteristics in MIS Tunnel Diodes by Oxide Local Thinning Enhanced Transient Current Behavior | Sung-Wei.Huang and Jenn-Gwo Hwu (胡振國) | IEEE Transactions on Electron Devices | Volume 69 |
| 32 | 3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 109 Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs | J.-Y. Lee, F.-S. Chang, K.-Y. Hsiang, P.-H. Chen, Z.-F. Luo, Z.-X. Li, J.-H. Tsai, C. W. Liu (劉致為), and M. H. Lee(李敏鴻) | 2023 Symposium on VLSI Technology and Circuits (VLSI) | |
| 33 | FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations | K.-Y. Hsiang, J.-Y. Lee, F.-S. Chang, Z.-F. Lou, Z.-X. Li, Z.-H. Li, J.-H. Chen, C. W. Liu, T.-H. Hou, and M. H. Lee (李敏鴻) | 2023 Symposium on VLSI Technology and Circuits (VLSI) | |
| 34 | Extremely High-k Hf0.2Zr0.8O2 Gate Stacks Integrated into Ge0.95Si0.05 Nanowire and Nanosheet nFETs Featuring Respective Record ION per Footprint of 9200μA/μm and Record ION per Stack of 360μA at VOV=VDS=0.5V | Yi-Chun Liu, Yu-Rui Chen, Yun-Wen Chen, Hsin-Cheng Lin, Wan-Hsuan Hsieh, Chien-Te Tu, Bo-Wei Huang, Wei-Jen Chen, Chun-Yi Cheng, Shee-Jier Chueh, and C. W. Liu (劉致為) | 2023 Symposium on VLSI Technology and Circuits (VLSI) | |
| 35 | First Stacked Nanosheet FeFET Featuring Memory Window of 1.8V at Record Low Write Voltage of 2V and Endurance >1E11 Cycles | Yu-Rui Chen, Yi-Chun Liu, Zefu Zhao, Wan-Hsuan Hsieh, Jia-Yang Lee, Chien-Te Tu, Bo-Wei Huang, Jer-Fu Wang, Shee-Jier Chueh, Yifan Xing, Guan-Hua Chen, Hung-Chun Chou, Dong Soo Woo, M. H. Lee, and C. W. Liu (劉致為) | 2023 Symposium on VLSI Technology and Circuits (VLSI) | |
| 36 | Towards Epitaxial Ferroelectric HZO on n+-Si/Ge Substrates Achieving Record 2Pr = 84 μC/cm2 and Endurance > 1E11 | Zefu Zhao, Yu-Rui Chen, Yun-Wen Chen, Wan-Hsuan Hsieh, Jer-Fu Wang, Jia-Yang Lee, Yifan Xing, Guan-Hua Chen, and C. W. Liu (劉致為) | 2023 Symposium on VLSI Technology and Circuits (VLSI) | |
| 37 | First Demonstration of a-IGZO GAA Nanosheet FETs Featuring Achievable SS=61 mV/dec, Ioff<10-7mA/mm, DIBL=44 mV/V, Positive VT, and Process Temp. of 300 oC | Jih-Chao Chiu, Eknath Sarkar, Yuan-Ming Liu, Yu-Ciao Chen, Yu-Cheng Fan, and C. W. Liu (劉致為) | 2023 Symposium on VLSI Technology and Circuits (VLSI) | |
| 38 | Energy- and Area-Efficient 8T SRAM Cell with FEOL CFETs and BEOL-Compatible Transistors | M. Lee, Z.-Y. Huang, S.-F. Fang, Y.-C. Lu, and V. P.-H. Hu (胡璧合) | 2022 IEEE International Electron Devices Meeting (IEDM) | |
| 39 | First Demonstration of Monolithic 3D Self-aligned GeSi Channel and Common Gate Complementary FETs by CVD Epitaxy Using Multiple P/N Junction Isolation | Chien-Te Tu, Yi-Chun Liu, Bo-Wei Huang, Yu-Rui Chen, Wan-Hsuan Hsieh, Chung-En Tsai, Shee-Jier Chueh, Chun-Yi Cheng, Yichen Ma, and C. W. Liu (劉致為) | 2022 IEEE International Electron Devices Meeting (IEDM) | |
| 40 | Novel Opposite Polarity Cycling Recovery (OPCR) of HfZrO2 Antiferroelectric-RAM with an Access Scheme Toward Unlimited Endurance | K.-Y. Hsiang, Y.-C. Chen, F.-S. Chang, C.-Y. Lin, C.-Y. Liao, Z.-F. Lou, J.-Y. Lee, W.-C. Ray, Z.-X. Li, C.-C. Wang, H.-C. Tseng, P.-H. Chen, J.-H. Tsai, M. H. Liao, T.-H. Hou, C. W. Liu (劉致為), P.-T. Huang, P. Su, and M. H. Lee (李敏鴻) | 2022 IEEE International Electron Devices Meeting (IEDM) | |
| 41 | Superlattice HfO2-ZrO2 based Ferro-Stack HfZrO2 FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 109 cycles for Multibit NVM | C.-Y. Liao, Z.-F. Lou, C.-Y. Lin, A. Senapati, R. Karmakar, K.-Y. Hsiang, Z.-X. Li, W.-C. Ray, J.-Y. Lee, P.-H. Chen, F.-S. Chang, H.-H. Tseng, C.-C. Wang, J.-H. Tsai, Y.-T. Tang, S. T. Chang (張書通), C. W. Liu (劉致為), S. Maikap (麥凱), and M. H. Lee (李敏鴻) | 2022 IEEE International Electron Devices Meeting (IEDM) | |
| 42 | Interfacial-Layer Design for Hf1-xZrxO2-Based FTJ Devices: From Atom to Array | H.-L. Chiang, J.-F. Wang, K.-H. Lin, C.-H. Nien, J.-J. Wu, K.-Y. Hsiang, C.-P. Chuu, Y.-W. Chen, X.W. Zhang, C. W. Liu (劉致為), Tahui Wang, C.-C. Wang, M.-H. Lee (李敏鴻), M.-F. Chang, C.-S. Chang, and T.C. Chen | 2022 Symposia on VLSI Technology and Circuits (VLSI) | |
| 43 | Nearly Ideal Subthreshold Swing and Delay Reduction of Stacked Nanosheets Using Ultrathin Bodies | Chung-En Tsai, Chun-Yi Cheng, Bo-Wei Huang, Hsin-Cheng Lin, Tao Chou, Chien-Te Tu, Yi-Chun Liu, Sun-Rong Jan, Yu-Rui Chen, Wan-Hsuan Hsieh, Kung-Ying Chiu, Shee-Jier Chueh, and C. W. Liu (劉致為) | 2022 Symposia on VLSI Technology and Circuits (VLSI) | |
| 44 | Endurance > 1011 Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO2 to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM | C.-Y. Liao, K.-Y. Hsiang, Z.-F. Lou, H.-C. Tseng, C.-Y. Lin, Z.-X. Li, F.-C. Hsieh, C.-C. Wang, F.-S. Chang, W.-C. Ray, Y.-Y. Tseng, S. T. Chang, T.-C. Chen, and M. H. Lee (李敏鴻) | 2022 Symposia on VLSI Technology and Circuits (VLSI) | |
| 45 | High-Density and High-Speed 4T FinFET SRAM for Cryogenic Computing | V. P.-H. Hu (胡璧合), Chang-Ju Liu, Hung-Li Chiang, Jer-Fu Wang, Chao-Ching Cheng, Tzu-Chiang Chen, and Meng-Fan Chang | 2021 IEEE International Electron Devices Meeting (IEDM) | |
| 46 | Contact Engineering for High-Performance N-Type 2D Semiconductor Transistors | Y. Lin, P.-C. Shen, C. Su, A.-S. Chou, T. Wu, C.-C. Cheng, J.-H. Park, M.-H. Chiu, A.-Y. Lu, H.-L. Tang, M. M. Tavakoli, G. Pitner, X. Ji, C. McGahan, X. Wang, Z. Cai, N. Mao, J. Wang, Y. Wang, W. Tisdale, X. Ling, K. E. Aidala, V. Tung, J. Li1 , A. Zettl, C.-I. Wu(吳志毅), Jing Guo, H. Wang, J. Bokor, T. Palacios, L.-J. Li , J. Kong | 2021 IEEE International Electron Devices Meeting (IEDM) | |
| 47 | Antimony Semimetal Contact with Enhanced Thermal Stability for High Performance 2DElectronics, | A-S Chou, T. Wu, C-C Cheng, S-S Zhan, I-C Ni, S-Y Wang, Y-C Chang, S-L Liew,E.Chen, W-H Chang, C-I Wu (吳志毅), J. Cai, H.-S. Philip Wong and H. Wang | 2021 IEEE International Electron Devices Meeting (IEDM) | |
| 48 | Highly Stacked 8 Ge0.9Sn0.1 Nanosheet pFETs with Ultrathin Bodies (~3nm) and Thick Bodies (~30nm) Featuring the Respective Record ION/IOFF of 1.4x107 and Record ION of 92μA at VOV=VDS= -0.5V by CVD Epitaxy and Dry Etching | Chung-En Tsai, Yi-Chun Liu, Chien-Te Tu, Bo-Wei Huang, Sun-Rong Jan, Yu-Rui Chen, Jyun-Yan Chen, Shee-Jier Chueh, Chun-Yi Cheng, Chia-Jung Tsen, Yichen Ma, and C. W. Liu (劉致為) | 2021 IEEE International Electron Devices Meeting (IEDM) | |
| 49 | First Demonstration of Interface-Enhanced SAF Enabling 400oC-Robust 42 nm p-SOT-MTJ Cells with STT-Assisted Field-Free Switching and Composite Channels | Ya-Jui Tsou, Kai-Shin Li, Jia-Min Shieh, Wei-Jen Chen, Hsiu-Chih Chen, Yi-Ju Chen, Cho-Lun Hsu, Yao-Min Huang, Fu-Kuo Hsueh, Wen-Hsien Huang, Wen-Kuan Yeh, Huan-Chi Shih, Pang-Chun Liu, C. W. Liu (劉致為), Yu-Shen Yen, Chih-Huang Lai, Jeng-Hua Wei, Denny D. Tang, and Jack Yuan-Chen Sun | 2021 Symposium on VLSI Technology | |
| 50 | First Highly Stacked Ge0.95Si0.05 nGAAFETs with Record ION = 110 μA (4100 μA/μm) at VOV=VDS=0.5V and High Gm,max = 340 μS (13000 μS/μm) at VDS=0.5V by Wet Etching | Yi-Chun Liu, Chien-Te Tu, Chung-En Tsai, Yu-Rui Chen, Jyun-Yan Chen, Sun-Rong Jan, Bo-Wei Huang, Shee-Jier Chueh, Chia-Jung Tsen, and C. W. Liu (劉致為) | 2021 Symposium on VLSI Technology | |
| 51 | First Demonstration of Multi-VT Stacked Ge0.87Sn0.13 Nanosheets by Dipole-Controlled ALD WNxCy Work Function Metal with Low Resistivity and Thermal Budget ≤ 400 °C | Chung-En Tsai, Yu-Rui Chen, Chien-Te Tu, Yi-Chun Liu, Jyun-Yan Chen, and C. W. Liu (劉致為) | 2021 Symposium on VLSI Technology | |
| 52 | Strain Effects On Rashba Spin-Orbit Coupling Of Two-Dimensional Hole Gases In Gesn/Ge Heterostructures | Chia-Tse Tai, Po-Yuan Chiu, Chia-You Liu, Hsiang-Shun Kao, C. T. Harris, T. M. Lu, C. T. Hsieh, S. W. Chang, and Jiun-Yun Li (李峻霣) | Advanced Materials | Volume 33 |
| 53 | Ultralow Contact Resistance Between Semimetal And Monolayer Semiconductors | Pin-Chun Shen, Cong Su, Yuxuan Lin, Ang-Sheng Chou, Chao-Ching Cheng, Ji-Hoon Park, Ming-Hui Chiu, Ang-Yu Lu, Hao-Ling Tang, Mohammad Mahdi Tavakoli, Gregory Pitner, Xiang Ji, Zhengyang Cai, Nannan Mao, Jiangtao Wang, Vincent Tung, Ju Li, Jeffrey Bokor, Alex Zettl, Chih-I Wu (吳志毅), Tomás Palacios1, Lain-Jong Li, Jing Kong | Nature | Volume 593 |
| 54 | Capacitance Matching By Optimizing The Geometry Of A Ferroelectric Hfo2-Based Gate For Voltage Amplification | K.-T. Chen, K.-Y. Hsiang, C.-Y. Liao, S.-H. Chang, F.-C. Hsieh, J.-H. Liu, S.-H. Chiang, H. Liang, S. T. Chang (張書通), M. H. Lee (李敏鴻) | Journal of Computational Electronics | |
| 55 | Multibit Ferroelectric Fet Based On Nonidentical Double Hfzro2 For High-Density Nonvolatile Memory | C.-Y. Liao, K.-Y. Hsiang, F.-C. Hsieh, S.-H. Chiang, S.-H. Chang, J.-H. Liu, C.-F. Lou, C.-Y. Lin, T.-C. Chen, C.-S. Chang, and M. H. Lee (李敏鴻) | IEEE Electron Device Letters | Volume 42 |
| 56 | Sub-7-Nm Textured Zro2 With Giant Ferroelectricity | Kuei-Wen Huang, Sheng-Han Yi, Yu-Sen Jiang, Wei-Chung Ka, Yu-Tung Yin, David Beck, Vladimir Korolkov, Roger Proksch, Jay Shien, Miin-Jang Chen (陳敏璋) | Acta Materialia | Volume 205 |
| 57 | Ferroelectric Undoped-Hfox Capacitor With Symmetric Synaptic For Neural Network Accelerator | Jun-Dao Luo, Yu-Ying Lai, Kuo-Yu Hsiang, Chia-Feng Wu, Yun-Tien Yeh, Hao-Tung Chung, Yi-Shao Li, Kai-Chi Chuang, Wei-Shuo Li, Chun-Yu Liao, Pin-Guang Chen, Kuan-Neng Chen, Min-Hung Lee (李敏鴻), and Huang-Chung Cheng | IEEE Transactions on Electron Devices | Volume 68 |
| 58 | Enhanced Electrical Performance Of Van Der Waals Heterostructure | Lei Xu, Yun-Yuan Wang, Chih-Hsiang Hsiao, I-Chih Ni, Mei-Hsin Chen, and Chih-I Wu (吳志毅) | Advanced Materials Interfaces | Volume 8 |