| 1 | Recent progress in undoped group-IV heterostructures for quantum technologies | Chia-Tse Tai and Jiun-Yun Li (李峻霣) | Materials for Quantum Technology | Volume 4 |
| 2 | Study and Optimization of Two-State Transient Currents at Millisecond Time Scales in MIS Tunnel Diodes | Sung-Wei Huang and Jenn-Gwo Hwu (胡振國) | IEEE Transactions on Electron Devices | Volume 70 |
| 3 | Improved Scalability of Negative Capacitance Junctionless Transistors with Underlap Design | M. Gupta and V. P.-H. Hu (胡璧合) | IEEE Transactions on Electron Devices | Volume 70 |
| 4 | Fatigue Mechanism of Antiferroelectric Hf0.1Zr0.9O2 Toward Endurance Immunity by Opposite Polarity Cycling Recovery (OPCR) for eDRAM | K.-Y. Hsiang, J.-Y. Lee, Z.-F. Lou, F.-S. Chang, Y.-C. Chen, Z.-X. Li, M. H. Liao, C. W. Liu, T.-H. Hou, P. Su, and M. H. Lee (李敏鴻) | IEEE Transactions on Electron Devices | Volume 70 |
| 5 | Three-Level MIS Antifuse Formed by Polarity-Dependent Dielectric Breakdown on 3.5 nm SiO2 for One-Time Programmable Application | Sung-Wei Huang and Jenn-Gwo Hwu (胡振國) | IEEE Transactions on Electron Devices | Volume 70 |
| 6 | Atomic layer engineering on resistive switching in sub-4 nm AlN resistive random access memory | Chen-Hsiang Ling, Chi-Lin Mo, Chun-Ho Chuang, Jing-Jong Shyue, and Miin-Jang Chen(陳敏璋) | Journal of Materials Chemistry C | |
| 7 | Impact of monolayer engineering on ferroelectricity of sub-5 nm Hf0.5Zr0.5O2 thin films | Ting-Yun Wang, Chi-Lin Mo, Chun-Yi Chou, Chun-Ho Chuang, and Miin-Jang Chen(陳敏璋) | Acta Materialia | Volume 250 |
| 8 | Wake-up-free ferroelectric Hf0.5Zr0.5O2 thin films characterized by precession electron diffraction | Teng-Jan Chang, Hsing-Yang Chen, Chin-I Wang, Hsin-Chih Lin, Chen-Feng Hsu, Jer-Fu Wang, Chih-Hung Nien, Chih-Sheng Chang, Iuliana P. Radu, and Miin-Jang Chen(陳敏璋) | Acta Materialia | Volume 246 |
| 9 | Inhibitor-Free Area-Selective Atomic Layer Deposition with Feature Size Down to Nearly 10 nm | Chun-Yi Chou, Chi-Lin Mo, Chih-Piao Chuu, Ting-Yun Wang, Chin-Chao Huang, Cheng-Hung Hou, Chun-Ho Chuang, Yu-Sen Jiang, Jing-Jong Shyue, and Miin-Jang Chen(陳敏璋) | Chemistry of Materials | Volume 35 |
| 10 | Room-Temperature Negative Differential Resistance and High Tunneling Current Density in GeSn Esaki Diodes | Chia-You Liu, Kai-Ying Tien, Po-Yuan Chiu, Yu-Jui Wu, Yen Chuang, Hsiang-Shun Kao, and Jiun-Yun Li (李峻霣) | Advanced Materials | Volume 34 |
| 11 | Dielectric Layer Design of Bilayer Ferroelectric and Antiferroelectric Tunneling Junctions Toward 3D NAND-Compatible Architecture | K.-Y. Hsiang, C.-Y. Liao, J.-H. Liu, C.-Y. Lin, J.-Y. Lee, Z.-F. Lou, F.-S. Chang, W.-C. Ray, Z.-X. Li, H.-C. Tseng, C.-C. Wang, M. H. Liao, T.-H. Hou, and M. H. Lee (李敏鴻) | IEEE Electron Device Letter | Volume 43 |
| 12 | Mechanisms of instability retention for ferroelectric field effect transistors with HfZrO2 gate stack scaling down | Chun-Yu Liao, Chen-Ying Lin, Zhi-Xian Li, Kuo-Yu Hsiang, Zhao-Feng Lou, Vita Pi-Ho Hu(胡璧合), and Min-Hung Lee (李敏鴻) | Applied Physics Letters | Volume 121 |
| 13 | Ferroelectric ZrO2 ultrathin films on silicon for metal-ferroelectric-semiconductor capacitors and transistors | Yu-Sen Jiang, Kuei-Wen Huang, Sheng-Han Yi, Chin-I Wang, Teng-Jan Chang, Wei-Chung Kao, Chun-Yuan Wang, Yu-Tung Yin, Jay Shieh, Miin-Jang Chen (陳敏璋) | 2022 Journal of the European Ceramic Society | Volume 42 |
| 14 | Improved Two States Characteristics in MIS Tunnel Diodes by Oxide Local Thinning Enhanced Transient Current Behavior | Sung-Wei.Huang and Jenn-Gwo Hwu (胡振國) | IEEE Transactions on Electron Devices | Volume 69 |
| 15 | 3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 109 Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs | J.-Y. Lee, F.-S. Chang, K.-Y. Hsiang, P.-H. Chen, Z.-F. Luo, Z.-X. Li, J.-H. Tsai, C. W. Liu (劉致為), and M. H. Lee(李敏鴻) | 2023 Symposium on VLSI Technology and Circuits (VLSI) | |
| 16 | FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations | K.-Y. Hsiang, J.-Y. Lee, F.-S. Chang, Z.-F. Lou, Z.-X. Li, Z.-H. Li, J.-H. Chen, C. W. Liu, T.-H. Hou, and M. H. Lee (李敏鴻) | 2023 Symposium on VLSI Technology and Circuits (VLSI) | |
| 17 | Extremely High-k Hf0.2Zr0.8O2 Gate Stacks Integrated into Ge0.95Si0.05 Nanowire and Nanosheet nFETs Featuring Respective Record ION per Footprint of 9200μA/μm and Record ION per Stack of 360μA at VOV=VDS=0.5V | Yi-Chun Liu, Yu-Rui Chen, Yun-Wen Chen, Hsin-Cheng Lin, Wan-Hsuan Hsieh, Chien-Te Tu, Bo-Wei Huang, Wei-Jen Chen, Chun-Yi Cheng, Shee-Jier Chueh, and C. W. Liu (劉致為) | 2023 Symposium on VLSI Technology and Circuits (VLSI) | |
| 18 | First Stacked Nanosheet FeFET Featuring Memory Window of 1.8V at Record Low Write Voltage of 2V and Endurance >1E11 Cycles | Yu-Rui Chen, Yi-Chun Liu, Zefu Zhao, Wan-Hsuan Hsieh, Jia-Yang Lee, Chien-Te Tu, Bo-Wei Huang, Jer-Fu Wang, Shee-Jier Chueh, Yifan Xing, Guan-Hua Chen, Hung-Chun Chou, Dong Soo Woo, M. H. Lee, and C. W. Liu (劉致為) | 2023 Symposium on VLSI Technology and Circuits (VLSI) | |
| 19 | Towards Epitaxial Ferroelectric HZO on n+-Si/Ge Substrates Achieving Record 2Pr = 84 μC/cm2 and Endurance > 1E11 | Zefu Zhao, Yu-Rui Chen, Yun-Wen Chen, Wan-Hsuan Hsieh, Jer-Fu Wang, Jia-Yang Lee, Yifan Xing, Guan-Hua Chen, and C. W. Liu (劉致為) | 2023 Symposium on VLSI Technology and Circuits (VLSI) | |
| 20 | First Demonstration of a-IGZO GAA Nanosheet FETs Featuring Achievable SS=61 mV/dec, Ioff<10-7mA/mm, DIBL=44 mV/V, Positive VT, and Process Temp. of 300 oC | Jih-Chao Chiu, Eknath Sarkar, Yuan-Ming Liu, Yu-Ciao Chen, Yu-Cheng Fan, and C. W. Liu (劉致為) | 2023 Symposium on VLSI Technology and Circuits (VLSI) | |
| 21 | Energy- and Area-Efficient 8T SRAM Cell with FEOL CFETs and BEOL-Compatible Transistors | M. Lee, Z.-Y. Huang, S.-F. Fang, Y.-C. Lu, and V. P.-H. Hu (胡璧合) | 2022 IEEE International Electron Devices Meeting (IEDM) | |
| 22 | First Demonstration of Monolithic 3D Self-aligned GeSi Channel and Common Gate Complementary FETs by CVD Epitaxy Using Multiple P/N Junction Isolation | Chien-Te Tu, Yi-Chun Liu, Bo-Wei Huang, Yu-Rui Chen, Wan-Hsuan Hsieh, Chung-En Tsai, Shee-Jier Chueh, Chun-Yi Cheng, Yichen Ma, and C. W. Liu (劉致為) | 2022 IEEE International Electron Devices Meeting (IEDM) | |
| 23 | Novel Opposite Polarity Cycling Recovery (OPCR) of HfZrO2 Antiferroelectric-RAM with an Access Scheme Toward Unlimited Endurance | K.-Y. Hsiang, Y.-C. Chen, F.-S. Chang, C.-Y. Lin, C.-Y. Liao, Z.-F. Lou, J.-Y. Lee, W.-C. Ray, Z.-X. Li, C.-C. Wang, H.-C. Tseng, P.-H. Chen, J.-H. Tsai, M. H. Liao, T.-H. Hou, C. W. Liu (劉致為), P.-T. Huang, P. Su, and M. H. Lee (李敏鴻) | 2022 IEEE International Electron Devices Meeting (IEDM) | |
| 24 | Superlattice HfO2-ZrO2 based Ferro-Stack HfZrO2 FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 109 cycles for Multibit NVM | C.-Y. Liao, Z.-F. Lou, C.-Y. Lin, A. Senapati, R. Karmakar, K.-Y. Hsiang, Z.-X. Li, W.-C. Ray, J.-Y. Lee, P.-H. Chen, F.-S. Chang, H.-H. Tseng, C.-C. Wang, J.-H. Tsai, Y.-T. Tang, S. T. Chang (張書通), C. W. Liu (劉致為), S. Maikap (麥凱), and M. H. Lee (李敏鴻) | 2022 IEEE International Electron Devices Meeting (IEDM) | |
| 25 | Interfacial-Layer Design for Hf1-xZrxO2-Based FTJ Devices: From Atom to Array | H.-L. Chiang, J.-F. Wang, K.-H. Lin, C.-H. Nien, J.-J. Wu, K.-Y. Hsiang, C.-P. Chuu, Y.-W. Chen, X.W. Zhang, C. W. Liu (劉致為), Tahui Wang, C.-C. Wang, M.-H. Lee (李敏鴻), M.-F. Chang, C.-S. Chang, and T.C. Chen | 2022 Symposia on VLSI Technology and Circuits (VLSI) | |
| 26 | Nearly Ideal Subthreshold Swing and Delay Reduction of Stacked Nanosheets Using Ultrathin Bodies | Chung-En Tsai, Chun-Yi Cheng, Bo-Wei Huang, Hsin-Cheng Lin, Tao Chou, Chien-Te Tu, Yi-Chun Liu, Sun-Rong Jan, Yu-Rui Chen, Wan-Hsuan Hsieh, Kung-Ying Chiu, Shee-Jier Chueh, and C. W. Liu (劉致為) | 2022 Symposia on VLSI Technology and Circuits (VLSI) | |
| 27 | Endurance > 1011 Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO2 to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM | C.-Y. Liao, K.-Y. Hsiang, Z.-F. Lou, H.-C. Tseng, C.-Y. Lin, Z.-X. Li, F.-C. Hsieh, C.-C. Wang, F.-S. Chang, W.-C. Ray, Y.-Y. Tseng, S. T. Chang, T.-C. Chen, and M. H. Lee (李敏鴻) | 2022 Symposia on VLSI Technology and Circuits (VLSI) | |
| 28 | High-Density and High-Speed 4T FinFET SRAM for Cryogenic Computing | V. P.-H. Hu (胡璧合), Chang-Ju Liu, Hung-Li Chiang, Jer-Fu Wang, Chao-Ching Cheng, Tzu-Chiang Chen, and Meng-Fan Chang | 2021 IEEE International Electron Devices Meeting (IEDM) | |
| 29 | Contact Engineering for High-Performance N-Type 2D Semiconductor Transistors | Y. Lin, P.-C. Shen, C. Su, A.-S. Chou, T. Wu, C.-C. Cheng, J.-H. Park, M.-H. Chiu, A.-Y. Lu, H.-L. Tang, M. M. Tavakoli, G. Pitner, X. Ji, C. McGahan, X. Wang, Z. Cai, N. Mao, J. Wang, Y. Wang, W. Tisdale, X. Ling, K. E. Aidala, V. Tung, J. Li1 , A. Zettl, C.-I. Wu(吳志毅), Jing Guo, H. Wang, J. Bokor, T. Palacios, L.-J. Li , J. Kong | 2021 IEEE International Electron Devices Meeting (IEDM) | |
| 30 | Antimony Semimetal Contact with Enhanced Thermal Stability for High Performance 2DElectronics, | A-S Chou, T. Wu, C-C Cheng, S-S Zhan, I-C Ni, S-Y Wang, Y-C Chang, S-L Liew,E.Chen, W-H Chang, C-I Wu (吳志毅), J. Cai, H.-S. Philip Wong and H. Wang | 2021 IEEE International Electron Devices Meeting (IEDM) | |
| 31 | Highly Stacked 8 Ge0.9Sn0.1 Nanosheet pFETs with Ultrathin Bodies (~3nm) and Thick Bodies (~30nm) Featuring the Respective Record ION/IOFF of 1.4x107 and Record ION of 92μA at VOV=VDS= -0.5V by CVD Epitaxy and Dry Etching | Chung-En Tsai, Yi-Chun Liu, Chien-Te Tu, Bo-Wei Huang, Sun-Rong Jan, Yu-Rui Chen, Jyun-Yan Chen, Shee-Jier Chueh, Chun-Yi Cheng, Chia-Jung Tsen, Yichen Ma, and C. W. Liu (劉致為) | 2021 IEEE International Electron Devices Meeting (IEDM) | |
| 32 | First Demonstration of Interface-Enhanced SAF Enabling 400oC-Robust 42 nm p-SOT-MTJ Cells with STT-Assisted Field-Free Switching and Composite Channels | Ya-Jui Tsou, Kai-Shin Li, Jia-Min Shieh, Wei-Jen Chen, Hsiu-Chih Chen, Yi-Ju Chen, Cho-Lun Hsu, Yao-Min Huang, Fu-Kuo Hsueh, Wen-Hsien Huang, Wen-Kuan Yeh, Huan-Chi Shih, Pang-Chun Liu, C. W. Liu (劉致為), Yu-Shen Yen, Chih-Huang Lai, Jeng-Hua Wei, Denny D. Tang, and Jack Yuan-Chen Sun | 2021 Symposium on VLSI Technology | |
| 33 | First Highly Stacked Ge0.95Si0.05 nGAAFETs with Record ION = 110 μA (4100 μA/μm) at VOV=VDS=0.5V and High Gm,max = 340 μS (13000 μS/μm) at VDS=0.5V by Wet Etching | Yi-Chun Liu, Chien-Te Tu, Chung-En Tsai, Yu-Rui Chen, Jyun-Yan Chen, Sun-Rong Jan, Bo-Wei Huang, Shee-Jier Chueh, Chia-Jung Tsen, and C. W. Liu (劉致為) | 2021 Symposium on VLSI Technology | |
| 34 | First Demonstration of Multi-VT Stacked Ge0.87Sn0.13 Nanosheets by Dipole-Controlled ALD WNxCy Work Function Metal with Low Resistivity and Thermal Budget ≤ 400 °C | Chung-En Tsai, Yu-Rui Chen, Chien-Te Tu, Yi-Chun Liu, Jyun-Yan Chen, and C. W. Liu (劉致為) | 2021 Symposium on VLSI Technology | |
| 35 | Strain Effects On Rashba Spin-Orbit Coupling Of Two-Dimensional Hole Gases In Gesn/Ge Heterostructures | Chia-Tse Tai, Po-Yuan Chiu, Chia-You Liu, Hsiang-Shun Kao, C. T. Harris, T. M. Lu, C. T. Hsieh, S. W. Chang, and Jiun-Yun Li (李峻霣) | Advanced Materials | Volume 33 |
| 36 | Ultralow Contact Resistance Between Semimetal And Monolayer Semiconductors | Pin-Chun Shen, Cong Su, Yuxuan Lin, Ang-Sheng Chou, Chao-Ching Cheng, Ji-Hoon Park, Ming-Hui Chiu, Ang-Yu Lu, Hao-Ling Tang, Mohammad Mahdi Tavakoli, Gregory Pitner, Xiang Ji, Zhengyang Cai, Nannan Mao, Jiangtao Wang, Vincent Tung, Ju Li, Jeffrey Bokor, Alex Zettl, Chih-I Wu (吳志毅), Tomás Palacios1, Lain-Jong Li, Jing Kong | Nature | Volume 593 |
| 37 | Capacitance Matching By Optimizing The Geometry Of A Ferroelectric Hfo2-Based Gate For Voltage Amplification | K.-T. Chen, K.-Y. Hsiang, C.-Y. Liao, S.-H. Chang, F.-C. Hsieh, J.-H. Liu, S.-H. Chiang, H. Liang, S. T. Chang (張書通), M. H. Lee (李敏鴻) | Journal of Computational Electronics | |
| 38 | Multibit Ferroelectric Fet Based On Nonidentical Double Hfzro2 For High-Density Nonvolatile Memory | C.-Y. Liao, K.-Y. Hsiang, F.-C. Hsieh, S.-H. Chiang, S.-H. Chang, J.-H. Liu, C.-F. Lou, C.-Y. Lin, T.-C. Chen, C.-S. Chang, and M. H. Lee (李敏鴻) | IEEE Electron Device Letters | Volume 42 |
| 39 | Sub-7-Nm Textured Zro2 With Giant Ferroelectricity | Kuei-Wen Huang, Sheng-Han Yi, Yu-Sen Jiang, Wei-Chung Ka, Yu-Tung Yin, David Beck, Vladimir Korolkov, Roger Proksch, Jay Shien, Miin-Jang Chen (陳敏璋) | Acta Materialia | Volume 205 |
| 40 | Ferroelectric Undoped-Hfox Capacitor With Symmetric Synaptic For Neural Network Accelerator | Jun-Dao Luo, Yu-Ying Lai, Kuo-Yu Hsiang, Chia-Feng Wu, Yun-Tien Yeh, Hao-Tung Chung, Yi-Shao Li, Kai-Chi Chuang, Wei-Shuo Li, Chun-Yu Liao, Pin-Guang Chen, Kuan-Neng Chen, Min-Hung Lee (李敏鴻), and Huang-Chung Cheng | IEEE Transactions on Electron Devices | Volume 68 |
| 41 | Enhanced Electrical Performance Of Van Der Waals Heterostructure | Lei Xu, Yun-Yuan Wang, Chih-Hsiang Hsiao, I-Chih Ni, Mei-Hsin Chen, and Chih-I Wu (吳志毅) | Advanced Materials Interfaces | Volume 8 |
| 42 | First Demonstration of Uniform 4-Stacked Ge0.9Sn0.1 Nanosheets with Record ION=78mA at VOV=VDS= -0.5V and Low Noise Using Double Ge0.95Sn0.05 Caps, Dry Etch, Low Channel Doping, and High S/D Doping | Yu-Shiang Huang, Chung-En Tsai, Chien-Te Tu, Jyun-Yan Chen, Hung-Yu Ye, Fang-Liang Lu, and C. W. Liu (劉致為) | 2020 IEEE International Electron Devices Meeting (IEDM) | |
| 43 | Operation Bandwidth Of Negative Capacitance Characterized By Frequency Response Of Capacitance Magnification In Ferroelectric/Dielectric Stacks | Yu-Sen Jiang, Yu-En Jeng, Yu-Tung Yin, Kuei-Wen Huang, Teng-Jan Chang, Chin-I Wang, Yu-Ting Chao, Chao-Hsin Wu, and Miin-Jang Chen (陳敏璋) | Journal of Materials Chemistry C | Volume 9 |
| 44 | Simulation On The Electric Field Effect Of Bi Thin Film | Lee-Chi Hong, Cheih Chou, and Hao-Hsiung Lin (林浩雄) | Solid State Electronics Letters | Volume 2 |
| 45 | Hole Mobility Calculation For Monolayer Molydenum Tungsten Alloy Disulfide | Ming-Ting Wu, Cheng-Hsien Yang, Yun-Fang Chung, Kuan-Ting Chen, and Shu-Tong Chang (張書通) | Journal of Nanoscience and Nanotechnology | Volume 20 |
| 46 | Random Polarization Distribution Of Multi-Domain Model For Polycrystalline Ferroelectric Hfzro2 | K.-T. Chen, C.-Y. Liao, K.-Y. Hsiang, S.-H. Chang, F.-J. Hsieh, H. Liang, S.-H. Chiang, J.-H. Liu, K.-S. Li, S. T. Chang(張書通), and M. H. Lee (李敏鴻) | Semiconductor Science and Technology | Volume 35 |
| 47 | Paraelectric /Antiferroelectric/Ferroelectric Phase Transformation In As-Deposited Zro2 Thin Films By The Tin Capping Engineering | Chun-Yuan Wang, Chin-I Wang, Sheng-Han Yi, Teng-Jan Chang, Chun-Yi Chou, Yu-Tung Yin, Makoto Shiojiri, and Miin-Jang Chen (陳敏璋) | Materials and Design | Volume 195 |
| 48 | Coupling Sensitivity In Concentric Metal-Insulator-Semiconductor Tunnel Diodes By Controlling The Lateral Injection Electrons | Kung-Chu Chen, and Jenn-Gwo Hwu (胡振國) | AIP Advances | Volume 10 |
| 49 | Sub-Nanometer Heating Depth Of Atomic Layer Annealing | Wei-Hao Lee, Wei-Chung Kao, Yu-Tung Yin, Sheng-Han Yi, Kuei-Wen Huang, Hsin-Chih Lin, and Miin-Jang Chen (陳敏璋) | Applied Surface Science | Volume 525 |
| 50 | Forming-Free, Nonvolatile, And Flexible Resistive Random-Access Memory Using Bismuth Iodide/Van Der Waals Materials Heterostructures | Chia-Shuo Li, Sheng-Wen Kuo, Yu-Tien Wu, Fang-Yu Fu, I-Chih Ni, Mei-Hsin Chen, and Chih-I Wu (吳志毅) | Advanced Materials Interfaces | Volume 7 |
| 51 | Low Contact Resistivity To Ge Using In-Situ B And Sn Incorporation By Chemical Vapor Deposition | Chung-En Tsai, Fang-Liang Lu, Yi-Chun Liu, Hung-Yu Ye, and C. W. Liu (劉致為) | IEEE Transactions on Electron Devices | Volume 67 |
| 52 | Studies Of 2D Bulk And Nanoribbon Band Structures In Moxw1–Xs2 Alloy System Using Full Sp3D5 Tight‐Binding Model | Tsung-Yin Tsai, Pin-Fang Chen, Shu-Wei Chang, and Yuh-Renn Wu (吳育任) | Physica Status Solidi (b) | Volume 258 |
| 53 | Ferroelectric Hfzro2 With Electrode Engineering And Stimulation Schemes As Symmetric Analog Synaptic Weight Element For Deep Neural Network Training | K.-Y. Hsiang, C.-Y. Liao, K.-T. Chen, Y.-Y. Lin, C.-Y. Chueh, C. Chang, Y.-J. Tseng, Y.-J. Yang, S. T. Chang(張書通), M.-H. Liao, T.-H. Hou, C.-H. Wu, C.-C. Ho, J.-P. Chiu, C.-S. Chang, and M. H. Lee (李敏鴻) | IEEE Transactions on Electron Devices | Volume 67 |
| 54 | Optical Detection Of Parasitic Channels Of Vertically Stacked Ge0.98Si0.02 Ngaafets | Shih-Ya Lin, Hsiao-Hsuan Liu, Chien-Te Tu, Yu-Shiang Huang, Fang-Liang Lu, and C. W. Liu (劉致為) | IEEE Transactions on Electron Devices | Volume 67 |
| 55 | Edge-Etched Al2O3 Dielectric As Charge Storage Region In A Coupled Mis Tunnel Diode Sensor | Bo-Jyun Chen and Jenn-Gwo Hwu (胡振國) | IEEE Journal of the Electron Devices Society | Volume 8 |
| 56 | Variational Quantum Circuits For Deep Reinforcement Learning | S. Y. Chen, C. H. Yang, J. Qi, P. Chen, X. Ma and H.-S. Goan (管希聖) | IEEE Access | Volume 8 |
| 57 | On-Current Enhancement In Treefet By Combining Vertically Stacked Nanosheets And Interbridges | Hung-Yu Ye and C. W. Liu (劉致為) | IEEE Electron Device Letters | Volume 41 |
| 58 | Full-Polaron Master Equation Approach To Dynamical Steady States Of A Driven Two-Level System Beyond The Weak System-Environment Coupling | C.-C. Chen, T. M. Stace, and H.-S. Goan (管希聖) | Physical Review B | Volume 102 |
| 59 | Luminescence Enhancement And Dual-Color Emission Of Stacked Mono-Layer 2D Materials | Po-Cheng Tsai, Hon-Chin Huang, Chun-Wei Huang, Shoou-Jinn Chang, and Shih-Yen Lin (林時彥) | Nanotechnology | Volume 31 |
| 60 | High On-Current 2D nFET of 390 μA/μm at VDS = 1V using Monolayer CVD MoS2 without Intentional Doping | Ang-Sheng Chou, Pin-Chun Shen, Chao-Ching Cheng, Li-Syuan Lu, Wei-Chen Chueh, Ming-Yang Li, Gregory Pitner, Wen-Hao Chang, Chih-I Wu (吳志毅), Jing Kong, Lain-Jong Li, and H.-S. Philip Wong | 2020 Symposium on VLSI Technology | |
| 61 | First Demonstration of 4-Stacked Ge0.915Sn0.085 Wide Nanosheets by Highly Selective Isotropic Dry Etching with High S/D Doping and Undoped Channels | Yu-Shiang Huang, Fang-Liang Lu, Chien-Te Tu, Jyun-Yan Chen, Chung-En Tsai, Hung-Yu Ye, Yi-Chun Liu and C. W. Liu (劉致為) | 2020 Symposium on VLSI Technology | |
| 62 | Record Low Contact Resistivity to Ge:B (8.1x10-10Ω-cm2) and GeSn:B (4.1x10-10Ω-cm2) with Optimized [B] and [Sn] by In-situ CVD Doping | Fang-Liang Lu, Yi-Chun Liu, Chung-En Tsai, Hung-Yu Ye, and C. W. Liu (劉致為) | 2020 Symposium on VLSI Technology | |
| 63 | Interpretable Neural Network to Model and to Reduce Self-Heating of FinFET Circuitry | Chia-Che Chung, Hsin-Cheng Lin, H. H. Lin, W. K. Wan, M.-T. Yang, and C. W. Liu (劉致為) | 2020 Symposium on VLSI Technology | |
| 64 | Analysis And Optimization Of Gan Based Multi-Channels Finfets | Chun-Lin Yu, Chih-Hao Lin, and Yuh-Renn Wu (吳育任) | IEEE Transactions on Nanotechnology | Volume 19 |
| 65 | Prolonged Transient Behavior In Ultra-Thin Oxide Mis-Tunneling Diode Induced By Deep Depletion Of Surrounded Coupling Electrode | Ting-Hao Hsu and Jenn-Gwo Hwu (胡振國) | IEEE Transactions on Electron Devices | Volume 67 |
| 66 | Improved Low-Voltage Sensing Performance In Mis(P) Tunnel Diodes By Oxide Thickening At The Gate Fringe | Kuan-Wun Lin and Jenn-Gwo Hwu (胡振國) | IEEE Transactions on Electron Devices | Volume 67 |
| 67 | Tungsten Diselenide Top-Gate Transistors With Multilayer Antimonene Electrodes: Gate Stacks And Epitaxially Grown 2D Material Heterostructures | Yu-Wei Zhang, Jun-Yan Li, Chao-Hsin Wu (吳肇欣), Chiao-Yun Chang, Shu-Wei Chang (張書維), Min-Hsiung Shih and Shih-Yen Lin (林時彥) | Scientific Reports | Volume 10 |
| 68 | Atomic Layer Densification Of Aln Passivation Layer On Epitaxial Ge For Enhancement Of Reliability And Electrical Performance Of High-K Gate Stacks | Chin-I Wang, Teng-Jan Chang, Yu-Tung Yin, Yu-Sen Jiang, Jing-Jong Shyue and Miin-Jang Chen (陳敏璋) | ACS Applied Electronic Materials | Volume 2 |
| 69 | Ultra-Low Subthreshold Swing In Gated Mis(P) Tunnel Diodes With Engineered Oxide Local Thinning Layers | Tzu-Hao Chiang and Jenn-Gwo Hwu (胡振國) | IEEE Transactions on Electron Devices | Volume 67 |
| 70 | Correlation Between Ferroelectricity And Nitrogen Incorporation Of Undoped Hafnium Dioxide Capacitor | Jun-Dao Luo, Yun-Tien Yeh, Yu-Ying Lai, Chia-Feng Wu, Hao-Tung Chung, Yi-Shao Li, Kai-Chi Chuang, Wei-Shuo Li, Pin-Guang Chen, Min-Hung Lee (李敏鴻), and Huang-Chung Cheng | Vacuum | Volume 176 |
| 71 | Van Der Waals Epitaxy Of Large-Area And Single-Crystalline Gold Films On Mos2 For Low-Contact-Resistance 2D-3D Interfaces | Kuan-Chao Chen, Syuan-Miao Lai, Bo-Yu Wu, Chi Chen, and Shih-Yen Lin (林時彥) | ACS Applied Nano Materials | Volume 3 |
| 72 | Size-Dependent Switching Properties Of Spin-Orbit Torque Mram With Manufacturing-Friendly 8-Inch Wafer-Level Uniformity | Sk Ziaur Rahaman, I-Jung Wang, Ding-Yeong Wang, Chi-Feng Pai, Yu-Chen Hsin, Shan-Yi Yang, Hsin-Han Lee, Yao-Jen Chang, Yi-Ching Kuo, Yi-Hui Su, Guan-Long Chen, Fang-Ming Chen, Jeng-Hua Wei, Tuo-Hung Hou, Shyh-Shyuan Sheu, Chih-I Wu (吳志毅), and Duan-Lee Deng | IEEE Journal of the Electron Devices Society | Volume 8 |
| 73 | Thermoelectric Transport Of The Half-Filled Lowest Landau Level In A P-Type Ge/Sige Heterostructure | Xiaoxue Liu, Tzu-Ming Lu, Charles Thomas Harris, Fang-Liang Lu, Chia-You Liu, Jiun-Yun Li, C. W. Liu (劉致為) and Rui-Rui Du | Physical Review B | Volume 101 |
| 74 | Low- Temperature Crystallization And Paraelectric-Ferroelectric Phase Transformation In Nanoscale Zro2 Thin Films Induced By Atomic Layer Plasma Treatment | Sheng-Han Yi, Kuei-Wen Huang, Hsin-Chih Lin and Miin-Jang Chen (陳敏璋) | Journal of Materials Chemistry C | Volume 8 |
| 75 | Topological Transition In A 3Nm Thick Al Film Grown By Molecular Beam Epitaxy | Ankit Kumar,Guan-Ming Su, Chau-Shing Chang, Ching-Chen Yeh, Bi-Yi Wu, Dinesh K. Patel, Yen-Ting Fan, Sheng-Di Lin, Lee Chow, and Chi-Te Liang (梁啟德) | Journal of Nanomaterials | Volume 2019 |
| 76 | Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf0.25Zr0.75O2 Negative Capacitance FETs | M. H. Lee (李敏鴻), K.-T. Chen, C.-Y. Liao, G.-Y. Siang, C. Lo, H.-Y. Chen, Y.-J. Tseng, C.-Y. Chueh, C. Chang, Y.-Y. Lin, Y.-J. Yang, F.-C. Hsieh, S. T. Chang (張書通), M.-H. Liao, K.-S. Li, and C. W. Liu (劉致為) | 2019 IEEE International Electron Devices Meeting (IEDM) | |
| 77 | First Vertically Stacked Tensily Strained Ge0.98Si0.02 nGAAFETs with No Parasitic Channel and LG = 40 nm Featuring Record ION = 48 mA at VOV=VDS=0.5V and Record Gm,max (mS/m)/SSSAT(mV/dec) = 8.3 at VDS=0.5V | Chien-Te Tu, Yu-Shiang Huang, Fang-Liang Lu, Hsiao-Hsuan Liu, Chung-Yi Lin, Yi-Chun Liu, and C. W. Liu (劉致為) | 2019 IEEE International Electron Devices Meeting (IEDM) | |
| 78 | First Stacked Ge0.88Sn0.12 pGAAFETs with Cap, LG=40nm, Compressive Strain of 3.3%, and High S/D Doping by CVD Epitaxy Featuring Record ION of 58mA at VOV=VDS= -0.5V, Record Gm,max of 172mS at VDS= -0.5V, and Low Noise | Yu-Shiang Huang, Chung-En Tsai, Chien-Te Tu, Hung-Yu Ye, Yi-Chun Liu, Fang-Liang Lu, and C. W. Liu (劉致為) | 2019 IEEE International Electron Devices Meeting (IEDM) | |
| 79 | Different Infrared Responses From The Stacked Channels And Parasitic Channel Of Stacked Gesn Channel Transistors | Hisao-Hsuan Liu, Yu-Shiang Huang, Fang-Liang Lu, Hung-Yu Ye, and C. W. Liu (劉致為) | IEEE Electron Device Letters | Volume 41 |
| 80 | Self-Heating Induced Interchannel Vt Difference Of Vertically Stacked Si Nanosheet Gate-All-Around Mosfets | Chia-Che Chung, Hung-Yu Ye, H. H. Lin, W. K. Wan, M.-T. Yang, and C. W. Liu (劉致為) | IEEE Electron Device Letters | Volume 40 |
| 81 | Carrier Mobility Calculation For Monolayer Black Phosphorous | Kuan-Ting Chen, Min-Hsin Hsieh, Yen-Shuo Su, Wen-Jay Lee, and Shu-Tong Chang (張書通) | Journal of Nanoscience and Nanotechnology | Volume 19 |
| 82 | Multi-Layer Elemental 2D Materials: Antimonene, Germanene And Stanene Grown Directly On Molybdenum Disulfides | Kuan-Chao Chen, Lun-Ming Lee, Hsuan-An Chen, Hsu Sun, Cheng-Lun Wu, Hsin-An Chen, Kuan-Bo Lin, Yen-Chun Tseng, Chao-Cheng Kaun, Chun-Wei Pao, and Shih-Yen Lin (林時彥) | Semiconductor Science and Technology | Volume 34 |
| 83 | Non-Markovianity, Information Backflow, And System-Environment Correlation | Yun-Yi Hsieh, Zheng-Yao Su, and Hsi-Sheng Goan (管希聖) | Physical Review A | Volume 100 |
| 84 | Evaluation Of Sweep Modes For Switch Response On Ferroelectric Negative Capacitance Fets | Kuan-Ting Chen, Yu-Chen Chou, Gao-Yu Siang, Hong-Yu Chen, Chieh Lo, Chun-Yu Liao, Shu-Tong Chang (張書通), and Min-Hung Lee (李敏鴻) | Applied Physics Express | Volume 12 |
| 85 | Low-Temperature Conformal Atomic Layer Etching Of Si With A Damage-Free Surface For Next Generation Atomic-Scale Electronic | Po-Hsien Cheng, Chin-I Wang, Chen-Hsiang Ling, Chen-Hsuan Lu, Yu-Tung Yin, Miin-Jang Chen(陳敏璋) | ACS Applied Nano Materials | Volume 2 |
| 86 | First Vertically Stacked, Compressively Strained, and Triangular Ge0.91Sn0.09 pGAAFETs with High ION of 19.3uA at VOV=VDS=-0.5V, Gm of 50.2uS at VDS=-0.5V and Low SSlin of 84mV/dec by CVD Epitaxy and Orientation Dependent Etching | Yu-Shiang Huang, Hung-Yu Ye, Fang-Liang Lu, Yi-Chun Liu, Chien-Te Tu, Chung-Yi Lin, Shih-Ya Lin, Sun-Rong Jan, and C. W. Liu (劉致為) | 2019 Symposium on VLSI Technology | |
| 87 | Record Low Contact Resistivity (4.4x10-10Ω-cm2) to Ge Using In-situ B and Sn Incorporation by CVD With Low Thermal Budget (≤400℃) and Without Ga | Fang-Liang Lu, Chung-En Tsai, Chih-Hsiung Huang, Hung-Yu Ye, Shih-Ya Lin, and C. W. Liu (劉致為) | 2019 Symposium on VLSI Technology | |
| 88 | Thermal Spice Modeling Of Finfet And Beol Considering Frequency-Dependent Transient Response, 3-D Heat Flow, Boundary/Alloy Scattering, And Interfacial Thermal Resistance | C.-C. Chung, H. H. Lin, W. K. Wan, M.-T. Yang, and C. W. Liu (劉致為) | IEEE Transactions on Electron Devices | Volume 66 |
| 89 | Roles Of Inner And Outer Fringe And Asymmetric Coupling Effect In Concentric Double-Mis(P) Tunneling Diodes | Yu-Hsuan Chen and Jenn-Gwo Hwu (胡振國) | ECS Transactions | Volume 89 |
| 90 | High-Fidelity And Robust Two-Qubit Gates For Quantum-Dot Spin Qubits In Silicon | C.-H. Huang, C. H. Yang, C.-C. Chen, A. S. Dzurak, and H.-S. Goan (管希聖) | Physical Review A | Volume 99 |
| 91 | Negative Capacitance From The Inductance Of Ferroelectric Switching | Po-Hsien Cheng, Yu-Tung Yin, I-Na Tsai, Chen-Hsuan Lu, Lain-Jong Li, Samuel C. Pan, Jay Shieh, Makoto Shiojiri, and Miin-Jang Chen (陳敏璋) | Nature Communications Physics | Volume 2 |
| 92 | Single And Double Hole Quantum Dots In Strained Ge/Sige Quantum Wells | W. J. Hardy, C. T. Harris, Y. H. Su, Y. Chuang, J. Moussa, L. N. Maurer, Jiun-Yun Li (李峻霣), T. M. Lu, and D. R. Luhman | Nanotechnology | Volume 30 |
| 93 | The Atomic Layer Etching Mechanisms Of Molybdenum Disulfides By Using Oxygen Plasma | Kuan-Chao Chen, Chia-Wei Liu, Chi Chen and Shih-Yen Lin (林時彥) | Semiconductor Science and Technology | Volume 34 |
| 94 | Quantum Phase Transition In Ultrahigh Mobility Sige/Si/Sige Two-Dimensional Electron System | M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov, Amy Y. X. Zhu, S. V. Kravchenko, S.-H. Huang, and C. W. Liu (劉致為) | Physical Review B | Volume 99 |
| 95 | Non-Volatile Ferroelectric Fets Using 5-Nm Hf0.5Zr0.5O2 With High Data Retention And Read Endurance For 1T Memory Applications | K.-T. Chen, R.-C. Hong, C.-Y. Liao, H.-Y. Chen, S.-S. Gu, Z.-Y. Wang, Y.-C. Chou, S.-Y. Chen, G.-Y. Siang, J. Le, M.-H. Liao, K.-S. Li, S. T. Chang(張書通), and M. H. Lee (李敏鴻) | IEEE Electron Device Letters | Volume 40 |
| 96 | Electron Mobility Enhancement In An Undoped Si/Sige Heterostructure By Remote Carrier Screening | Y. H. Su, K. Y. Chou, Y. Chuang, T. M. Lu, and Jiun-Yun Li (李峻霣) | Journal of Applied Physics | Volume 125 |
| 97 | Photoresponse Of Homostructure Wse2 Rectifying Diode | T. H. Peng, C. H. Hong, M. R. Tang, and S. C. Lee (李嗣涔) | AIP Advances | Volume 9 |
| 98 | Effects Of Annealing Temperature And Nitrogen Content On Effective Work Function Of Tungsten Nitride | Chih-Hsiung Huang, Chung-En Tsai, Yu-Rui Chen, and C. W. Liu (劉致為) | IEEE Electron Device Letters | Volume 40 |
| 99 | Two Capacitance States Memory Characteristic In Metal-Oxide-Semiconductor (Mos) Structure Controlled By An Outer Mos Gate Ring | Hao-Jyun Li, Chang-Feng Yang and Jenn-Gwo Hwu (胡振國) | IEEE Transactions on Electron Devices | Volume 66 |
| 100 | Gate Oxide Local Thinning Mechanism Induced Sub-60 Mv/Decade Subthreshold Swing On Charge-Coupled Mis(P) Tunnel Transistor | Chang-Feng Yang , Bo-Jyun Chen, Wei-Chen Chen, Kuan-Wun Lin, and Jenn-Gwo Hwu (胡振國) | IEEE Transactions on Electron Devices | Volume 66 |
| 101 | Enhanced Two States Current In Mos-Gated Mis Separate Write/Read Storage Device By Oxide Soft Breakdown In Remote Gate | Wei-Chen Chen, Chang-Feng Yang and Jenn-Gwo Hwu (胡振國) | IEEE Transactions on Nanotechnology | Volume 18 |
| 102 | Mobility Calculation Of Ge Nanowire Junctionless And Inversion-Mode Nanowire Nfets With Size And Shape Dependence | Hung-Yu Ye, Chia-Che Chung, and C. W. Liu (劉致為) | IEEE Transactions on Electron Devices | Volume 65 |
| 103 | Black Phosphorus With A Unique Rectangular Shape And Its Anisotropic Properties | Y. Hsiao, P. Y. Chang, K. L. Fan, N. C. Hsu, and S. C. Lee (李嗣涔) | AIP Advances | Volume 8 |
| 104 | 3D Self-Consistent Quantum Transport Simulation For Gaas Gate-All-Around Nanowire Field-Effect Transistor With Elastic And Inelastic Scattering Effects | Han-Wei Hsiao and Yuh-Renn Wu (吳育任) | Physica Status Solidi (a) | Volume 216 |
| 105 | Current Enhancement And Bipolar Current Modulation Of Top-Gate Transistors Based On Monolayer Mos2 On Three-Layer Wxmo1-Xs2 | Kuan-Chao Chen, Cing-Yu Jian, Yi-Jia Chen, Si-Chen Lee, Shu-Wei Chang (張書維), and Shih-Yen Lin (林時彥) | ACS Applied Materials & Interfaces | Volume 10 |