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1Semiconductor device and method for fabricating the same王俊元/陳敏璋Pending Issue date 2024/09/01 Patent No I854449
2Device With Alternate Complementary Channels And Fabrication Method Thereof林詩雅/杜建德/蔡仲恩/劉致為Pending Issue date 2023/07/21 Patent No I809822
3Memory Device And Method For Forming The Same李家碩/吳雨恬/陳柏佑/倪懿池/吳志毅Pending Issue date 2024/01/21 Patent No I830209
4Superconductive Qubit Device And Manufacturing Method Thereof葉昱辰/梁啟德/管希聖Pending Issue date 2023/12/11 Patent No I825815
5Memory Device And Formation Method Thereof邱日照/鄒亞叡/陳韋任/劉致為/林劭昱/王智麟Pending Issue date 2024/01/21 Patent No I830298
6Integrated circuit structure and fabrication thereof鍾嘉哲/鄭群議/劉致為Pending Issue date 2024/05/21 Patent No I843098
7Method For Forming 2-D Material Semiconductor Device With Improved Source/Drain Electrodes And Gate Dielectric林時彥/蔡柏政/張煜偉Issue date 2024/09/03 Patent No 12,080,557
8Memory Device And Forming Method Thereof鄒亞叡/陳韋任/劉邦均/劉致為/林劭昱/王智麟Issue date 2024/08/13 Patent No 12,062,713 Issue date 2023/10/01 Patent No I817845
9Integrated Circuit Device And Method For Forming The Same張雅婷/黃健治/楊晉賓/倪懿池/吳志毅Issue date 2024/08/13 Patent No 12,062,540 Issue date 2023/08/11 Patent No I812096
10Memory structure and formation method thereof陳韋任/鄒亞叡/劉致為/林劭昱/王智麟Issue date 2024/07/30 Patent No 12,052,934
11Flash memory device and method thereof李峻霣/許乃文/吳俞叡/侯韋志/莊 嚴/劉家佑Issue date 2024/07/30 Patent No 12,051,756
12Physically Unclonable Function Cell And Operation Method Of Same鍾嘉哲/岑家榮/鄒亞叡/劉致為Issue date 2024/04/23 Patent No 11,967,351 Issue date 2023/09/11 Patent No I815554
13Stacked Semiconductor Device With Nanostructure Channels And Manufacturing Method Thereof杜建德/林鑫成/劉致為Issue date 2024/04/09 Patent No 11,955,384
14Electronic Device And Manufacturing Method Thereof李峻霣/陳士元/張燿均/黃慕召/陳炯佑Issue date 2024/03/19 Patent No 11,934,916 Issue date 2024/03/11 Patent No I834998
15Semiconductor Device And Formation Method葉泓佑/黃郁翔/杜建德/劉致為Issue date 2024/02/20 Patent No 11,908,892 Issue date 2022/12/21 Patent No I788031
16Metal-Insulator-Semiconductor Tunnel Diode Memory胡振國/許庭昊Issue date 2023/12/26 Patent No 11,855,099
17Magnetic Tunnel Junction Structures And Related Methods羅宗祐/鄒亞叡/董宜承/劉致為Issue date 2023/03/14 Patent No 11,605,670
18Memory Device And Manufacturing Method Thereof胡振國/江子豪Issue date 2022/12/20 Patent No 11,532,669
19Nanowire stack GAA device with selectable numbers of channel strips鄒亞叡/羅宗祐/黃文宏/顏智洋/劉致為Issue date 2022/08/09 Patent No 11,411,082
20Magnetoresistive memory device and manufacturing method thereof羅宗祐/鄒亞叡/劉致為/林劭昱/鍾良佐/王智麟Issue date 2022/08/09  Patent No 11,410,714
21Semiconductor device and manufacturing method thereof王勻遠/蕭至翔/吳志毅Issue date 2022/06/14 Patent No 11,362,180
22Memory Device, Sram Cell, and Manufacturing Method Thereof葉泓佑/林宗毅/潘韻如/劉致為Issue date 2022/03/22 Patent No 11,282,843
23Electronic device and manufacturing method thereof陳士元/李峻霣/許瑞福/陳炯佑/葉庭懿/吳俞叡/張燿均Issue date 2022/03/15  Patent No 11,276,653
24Vertical tunnel field-effect transistor with U-shaped gate and band aligner李峻霣/施保全/侯韋志Issue date 2022/02/08 Patent No 11,245,011
25Semiconductor device and manufacturing method thereof黃智雄/蔡仲恩/劉致為/郭觀華/蕭亦修Issue date 2022/02/08 Patent No 11,244,945
26Semiconductor device and manufacturing method thereof洪銘輝/郭瑞年/萬獻文/楊博宇/鄭伊婷/洪毓傑Issue date 2022/02/08  Patent No 11,245,023
27Semiconductor device and manufacturing method thereof蔡仲恩/鍾嘉哲/劉致為Issue date 2022/01/25 Patent No 11,233,120
28Deposition system and method using the same黃健治/許芸瑄/倪懿池/吳志毅Issue date 2022/01/25 Patent No 11,232,982
29Semiconductor device having high-.kappa. dielectric layer and method for manufacturing the same傅千驊/林耕雍/林延勳/陳冠雄/郭瑞年/洪銘輝Issue date 2021/12/14 Patent No 11,201,055
30Memory device and manufacturing method thereof胡振國/陳柏均/林冠文Issue date 2021/12/07 Patent No 11,195,835
31Memory device and manufacturing method thereof鄒亞叡/羅宗祐/劉致為/林劭昱/鍾良佐/王智麟Issue date 2021/11/16 Patent No 11,177,430
32Method for manufacturing semiconductor device having via formed by ion beam楊哲維/林浩雄Issue date 2021/10/19 Patent No 11,152,251
33Source/drain contact with 2-D material林時彥/陳冠超/陳璿安/李倫銘Issue Date 2021/09/14 Patent No 11,121,214
34Ferroelectric MFM inductor and related circuits陳敏璋/鄭柏賢/殷瑀彤Issue Date 2021/09/07 Patent No 11,114,564
35Semiconductor device and forming method thereof陳敏璋/易聖涵/呂承軒Issue Date 2021/08/24 Patent No 11,101,362
36Asynchronous circuits and test methods李建模/沈庭宇Issue date 2021/06/29 Patent No 11,047,911
37Germanium nanosheets and methods of forming the same鄭鴻祥Issue date 2021/06/08 Patent No 11,031,239 Issue date 2021/05/01 Patent No I726338
38Semiconductor device and operation method thereof胡振國/許庭昊Issue date 2021/03/23 Patent No 10,958,216
39Semiconductor structures with two-dimensional materials林時彥/陳璿安Issue date 2020/12/22 Patent No 10,872,973
40Gated metal-insulator-semiconductor (MIS) tunnel diode having negative transconductance胡振國/廖建舜Issue date 2020/12/15 Patent No 10,868,157
41Ohmic contact structure, semiconductor device including an ohmic contact structure, and method for forming the same綦振瀛/鄒承翰Issue date 2020/12/15 Patent No 10,868,128
42Laser anneal process魯珺地/李孟津/呂芳諒/劉致為Issue date 2020/12/15 Patent No 10,867,809
43Semiconductor device with ferroelectric aluminum nitride陳敏璋/林柏廷/謝宗霖Issue date 2020/11/24 Patent No 10,847,623
44Semiconductor device and method for manufacturing the same顏智洋/呂芳諒/劉致為Issue date 2020/10/13 Patent No 10,804,180
45Method for reducing Schottky barrier height and semiconductor device with reduced Schottky barrier height鄭鴻祥Issue date 2020/10/06 Patent No 10,797,137
462D crystal hetero-structures and manufacturing methods thereof林時彥/陳冠超/李嗣涔Issue date 2020/09/22 Patent No 10,784,351 Issue date 2023/01/11 Patent No I789380 Issue date 2023/12/15 Patent No 108630750
47Semiconductor device having boron-doped germanium tin epitaxy structure and method for forming the same蔡仲恩/呂芳諒/陳品翔/劉致為Issue date 2020/09/15 Patent No 10,777,663
48Material having single crystal perovskite, device including the same, and manufacturing method thereof楊博宇/盧冠傑/鄭兆凱/林延勳/萬獻文/林耕雍/郭瑞年/洪銘輝Issue date 2020/08/25 Patent No 10,755,924 Issue date 2021/01/01 Patent No I714772 Issue date 2021/05/25 Patent No 107447254
49Stacked vertically isolated MOSFET structure and method of forming the same黃郁翔/葉泓佑/黃文宏/劉致為Issue date 2020/08/18 Patent No 10,748,935
50Semiconductor device and manufacturing method thereof楊博宇/林延勳/萬獻文/林耕雍/郭瑞年/洪銘輝Issue date 2020/08/18 Patent No 10,748,774
51Semiconductor device and manufacturing method thereof吳肇欣/張立成/戴承家/楊舜丞Issue date 2020/07/28 Patent No 10,727,328
52Semiconductor device and manufacturing methods thereof廖宇鴻/樊聖亭/李敏鴻/劉致為Issue date 2020/06/16 Patent No 10,686,072 Issue date 2021/02/01 Patent No I717528 Issue date 2022/10/25 Patent No 108231873
53Device with doped phosphorene and method for doping phosphorene林佑明/吳肇欣/張洵銘 Issue date 2020/05/19 Patent No 10,658,470
54Charge storage and sensing devices and methods胡振國/廖建舜/高偉智 Issue date 2020/05/12 Patent No 10,651,300
55Forming semiconductor structures with two-dimensional materials林時彥/陳璿安/李嗣涔Issue date 2020/01/21 Patent No 10,541,132
56Semiconductor device and manufacturing method thereof呂芳諒/彭裕鈞/鍾嘉哲/劉致為Issue date 2020/01/14 Patent No 10,535,737
57Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operation, and memory device including the same 胡振國/楊昶豐/林浩雄Issue date 2019/12/24 Patent No 10,515,998
58Method for forming stressor, semiconductor device having stressor, and method for forming the same林浩雄/楊哲維Issue date 2019/12/24 Patent No 10,516,050 Issue date 2022/05/11 Patent No I763691 Issue date 2022/06/14 Patent No 107665919
59Semiconductor device and manufacturing method thereof呂芳諒/翁翊軒/林詩雅/劉致為Issue date 2019/12/17 Patent No 10,510,888 Issue date 2022/03/11 Patent No I757373 Issue date 2021/09/14 Patent No 108122754
60Forming semiconductor structures with semimetal features楊哲維/林浩雄Issue date 2019/12/10 Patent No 10,504,999
61Design-for-test for asynchronous circuit elements黃觀晏/沈庭宇/李建模Issue date 2019/10/01 Patent No 10,429,440
62Semiconductor devices comprising 2D-materials and methods of manufacture thereof 林時彥/吳崇榮/張翔睿Issue date 2019/09/03 Patent No 10,403,744 Issue date 2019/05/23 Patent No 10-1983876
63Semiconductor memory device 胡振國/廖建舜/曾冠豪Issue date 2019/08/13 Patent No 10,381,353
64Method for direct forming stressor, semiconductor device having stressor, and method for forming the same林浩雄/楊哲維Issue date 2019/07/09 Patent No 10,347,538
65Semiconductor device having stressor layer劉致為/藍偟翔/黃仕賢/蔡仲恩/劉繼文Issue date 2019/07/02 Patent No 10,340,383 Issue date 2022/03/11 Patent No I757272 Issue date 2022/04/19 Patent No 107230729
66Semiconductor device and manufacturing method thereof翁翊軒/呂芳諒/蔡仲恩/藍偟翔/劉致為Issue date 2019/06/25 Patent No 10,332,985 Issue date 2020/01/01 Patent No I681463 Issue date 2021/11/02 Patent No 109427593
67Single-crystal rare earth oxide grown on III-V compound陳冠雄/洪銘輝/郭瑞年/林延勳/吳紹筠Issue date 2019/05/07 Patent No 10,283,349
68Metallic channel device and manufacturing method thereof陳敏璋/鄭柏賢Issue date 2019/04/23 Patent No 10,269,982
69Multi-channel field effect transistors using 2D-material陳品翔/張弘志/劉致為Issue date 2019/04/23 Patent No 10,269,981
70 HEMTs with an AlxGa1-xN barrier layer grown by plasma enhanced atomic layer deposition陳敏璋/施奐宇Issue date 2019/04/23 Patent No 10,269,923
71Method of forming a semiconductor device using layered etching and repairing of damaged portions林時彥/陳冠超/吳崇榮/屈統威/李嗣涔Issue date 2019/04/23 Patent No 10,269,564
72Asynchronous pipeline circuit 賴奕翔/施淳浤/江介宏Issue date 2018/12/18 Patent No 10,157,249
73Method of manufacturing a FET using a two dimensional transition metal dichalcogenide including a low power oxygen plasma treatment林時彥/吳崇榮/陳冠超Issue date 2018/12/04 Patent No 10,147,603
74Field effect transistor using transition metal dichalcogenide and a method for manufacturing the same吳育任/陳爍帆Issue date 2018/11/27 Patent No 10,141,412
75Semiconductor device and method 樊聖亭/陳品翔/劉致為Issue date 2018/10/23 Patent No 10,109,477 Issue date 2018/10/01 Patent No I637429 Issue date 2020/05/12 Patent No 107039280
76Semiconductor device including field effect transistor and a method for fabricating the same劉致為/呂芳諒/黃仕賢/翁翊軒Issue date 2018/09/04 Patent No 10,068,995
77Negative capacitance field effect transistor with charged dielectric material 賴德全/沈育誠/李敏鴻/劉致為Issue date 2018/05/22 Patent No 9,978,868
78Method for non-resist nanolithography陳敏璋/蔡坤諭/劉致為Issue date 2018/05/15 Patent No 9,972,702
79Antifuse array and method of forming antifuse using anodic oxidation胡振國/田維誠/潘正聖/王昭雄/劉繼文Issue date 2018/04/24 Patent No 9,953,989
80Graphene transistor and related methods劉尚奕/吳志毅/程琮欽Issue date 2018/04/10 Patent No 9,941,380 Issue date 2020/11/11 Patent No I710065
81Charged-particle-beam patterning without resist蔡坤諭/陳敏璋 Issue date 2018/04/03 Patent No 9,934,969 Issue date 2016/07/11 Patent No I541860 Issue date 2018/09/11 Patent No 104821274
82Methods of graphene growth and related structures陳敏璋/謝忠諺Issue date 2018/03/20 Patent No 9,923,142
83Semiconductor device and method of formation廖洺漢Issue date 2018/03/13 Patent No 9,917,169 Issue date 2019/07/19 Patent No 105280689
84Semiconductor device with transition metal dichalocogenide hetero-structure林時彥/吳崇榮/張翔睿 Issue date 2018/02/20 Patent No 9,899,537
85Semiconductor devices comprising 2D-materials and methods of manufacture thereof 林孟佑/林時彥/李嗣涔Issue date 2018/01/02 Patent No 9,859,115 Issue date 2021/05/11 Patent No 105895502
86Semiconductor device and formation thereof 陳彥廷/翁翊軒/劉致為Issue date 2017/12/19 Patent No 9,847,233
87Methods of forming an interconnect structure using a self-ending anodic oxidation胡振國/田維誠/潘正聖/王昭雄/劉繼文Issue date 2017/11/07 Patent No 9,812,395
88Method for fabricating a fine structure陳敏璋/鄭柏賢Issue date 2017/09/26 Patent No 9,773,662
89Double exponential mechanism controlled transistor胡振國/廖建舜Issue date 2017/08/29 Patent No 9,748,379
90One-dimensional nanostructure growth on graphene and devices thereof林浩雄/楊哲維Issue date 2017/07/18 Patent No 9,711,607
91Semiconductor device and transistor顏智洋/賴德全/劉致為Issue date 2017/06/13 Patent No 9,679,893 Issue date 2019/08/09 Patent No 106158934
92Semiconductor device and method of manufacture高振宏/陳敏璋/楊博軒Issue date 2017/05/30 Patent No 9,666,441
93Three-dimensional transistor and methods of manufacturing thereof 顏智洋/葉泓佑/張達智/劉致為Issue date 2017/04/18 Patent No 9,627,411
94Semiconductor device structure and method 梁啟德/洪銘輝/劉泛鴻Issue date 2017/04/11 Patent No 9,620,605 Issue date 2019/04/23 Patent No 106158858
95MOS devices with ultra-high dielectric constants and methods of forming the same廖洺漢 (洪銘輝)Issue date 2017/04/04 Patent No 9,614,079
96Semiconductor device structure and method for forming the same林時彥/吳崇榮Issue date 2017/02/21 Patent No 9,577,049
97Logic circuit and system and computer program product for logic synthesis 江介宏/莊紀銓/賴奕翔Issue date 2017/02/21 Patent No 9,576,094
98Projection patterning with exposure mask蔡坤諭/陳敏璋 Issue date 2017/02/14 Patent No 9,570,301
99Field effect transistors and methods of forming same翁翊軒/葉泓佑/劉致為Issue date 2017/01/31 Patent No 9,559,209
100Field effect transistors and methods of forming same賴德全/陳品翔/張弘志/劉致為Issue date 2017/01/31 Patent No 9,559,168
101Systems and methods for forming nanowires using anodic oxidation田維誠/胡振國/曾柏皓Issue date 2016/12/27 Patent No 9,528,194
102Semiconductor device and method of formation林孟佑/林時彥/李嗣涔Issue date 2016/12/20 Patent No 9,525,072 Issue date 2020/01/14 Patent No 106206680 Issue date 2017/03/15 Patent No 10-1716938
103RRAM devices黃義仁/李嗣涔Issue date 2016/12/20 Patent No 9,525,008
104Field effect transistors and methods of forming same陳品翔/樊聖亭/劉致為Issue date 2016/11/08 Patent No 9,490,430
105Transistor with wurtzite channel張弘志/陳品翔/劉致為Issue date 2016/08/23 Patent No 9,425,250
106Tunnel MOSFET with ferroelectric gate stack李敏鴻Issue date 2016/07/12 Paten No 9,391,162
107Semiconductor device having a charged insulating layer陳彥瑜/林軒毅/劉致為Issue date 2016/02/16 Patent No 9,263,542
1083D UTB transistor using 2D-material channels 張弘志/陳品翔/劉致為Issue date 2016/01/19 Patent No 9,240,478
109Using molecular beam epitaxy in a semiconductor structure with a high K/GaSb interface朱瑞霖/洪銘輝/郭瑞年/皮敦文/綦振瀛Issue date 2015/12/15 Patent No 9,214,518