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1Electronic Device And Manufacturing Method Thereof李峻霣/陳士元/張燿均/黃慕召/陳炯佑Issue date 2024/03/19 Patent No 11,934,916 Issue date 2024/03/11 Patent No I834998
2Semiconductor Device And Formation Method葉泓佑/黃郁翔/杜建德/劉致為Issue date 2024/02/20 Patent No 11,908,892 Issue date 2022/12/21 Patent No I788031
3Metal-Insulator-Semiconductor Tunnel Diode Memory胡振國/許庭昊Issue date 2023/12/26 Patent No 11,855,099
4Magnetic Tunnel Junction Structures And Related Methods羅宗祐/鄒亞叡/董宜承/劉致為Issue date 2023/03/14 Patent No 11,605,670
5Memory Device And Manufacturing Method Thereof胡振國/江子豪Issue date 2022/12/20 Patent No 11,532,669
6Nanowire stack GAA device with selectable numbers of channel strips鄒亞叡/羅宗祐/黃文宏/顏智洋/劉致為Issue date 2022/08/09 Patent No 11,411,082
7Magnetoresistive memory device and manufacturing method thereof羅宗祐/鄒亞叡/劉致為/林劭昱/鍾良佐/王智麟Issue date 2022/08/09  Patent No 11,410,714
8Semiconductor device and manufacturing method thereof王勻遠/蕭至翔/吳志毅Issue date 2022/06/14 Patent No 11,362,180
9Memory Device, Sram Cell, and Manufacturing Method Thereof葉泓佑/林宗毅/潘韻如/劉致為Issue date 2022/03/22 Patent No 11,282,843
10Electronic device and manufacturing method thereof陳士元/李峻霣/許瑞福/陳炯佑/葉庭懿/吳俞叡/張燿均Issue date 2022/03/15  Patent No 11,276,653
11Vertical tunnel field-effect transistor with U-shaped gate and band aligner李峻霣/施保全/侯韋志Issue date 2022/02/08 Patent No 11,245,011
12Semiconductor device and manufacturing method thereof黃智雄/蔡仲恩/劉致為/郭觀華/蕭亦修Issue date 2022/02/08 Patent No 11,244,945
13Semiconductor device and manufacturing method thereof洪銘輝/郭瑞年/萬獻文/楊博宇/鄭伊婷/洪毓傑Issue date 2022/02/08  Patent No 11,245,023
14Semiconductor device and manufacturing method thereof蔡仲恩/鍾嘉哲/劉致為Issue date 2022/01/25 Patent No 11,233,120
15Deposition system and method using the same黃健治/許芸瑄/倪懿池/吳志毅Issue date 2022/01/25 Patent No 11,232,982
16Semiconductor device having high-.kappa. dielectric layer and method for manufacturing the same傅千驊/林耕雍/林延勳/陳冠雄/郭瑞年/洪銘輝Issue date 2021/12/14 Patent No 11,201,055
17Memory device and manufacturing method thereof胡振國/陳柏均/林冠文Issue date 2021/12/07 Patent No 11,195,835
18Memory device and manufacturing method thereof鄒亞叡/羅宗祐/劉致為/林劭昱/鍾良佐/王智麟Issue date 2021/11/16 Patent No 11,177,430
19Method for manufacturing semiconductor device having via formed by ion beam楊哲維/林浩雄Issue date 2021/10/19 Patent No 11,152,251
20Source/drain contact with 2-D material林時彥/陳冠超/陳璿安/李倫銘Issue Date 2021/09/14 Patent No 11,121,214
21Ferroelectric MFM inductor and related circuits陳敏璋/鄭柏賢/殷瑀彤Issue Date 2021/09/07 Patent No 11,114,564
22Semiconductor device and forming method thereof陳敏璋/易聖涵/呂承軒Issue Date 2021/08/24 Patent No 11,101,362
23Asynchronous circuits and test methods李建模/沈庭宇Issue date 2021/06/29 Patent No 11,047,911
24Germanium nanosheets and methods of forming the same鄭鴻祥Issue date 2021/06/08 Patent No 11,031,239 Issue date 2021/05/01 Patent No I726338
25Semiconductor device and operation method thereof胡振國/許庭昊Issue date 2021/03/23 Patent No 10,958,216
26Semiconductor structures with two-dimensional materials林時彥/陳璿安Issue date 2020/12/22 Patent No 10,872,973
27Gated metal-insulator-semiconductor (MIS) tunnel diode having negative transconductance胡振國/廖建舜Issue date 2020/12/15 Patent No 10,868,157
28Ohmic contact structure, semiconductor device including an ohmic contact structure, and method for forming the same綦振瀛/鄒承翰Issue date 2020/12/15 Patent No 10,868,128
29Laser anneal process魯珺地/李孟津/呂芳諒/劉致為Issue date 2020/12/15 Patent No 10,867,809
30Semiconductor device with ferroelectric aluminum nitride陳敏璋/林柏廷/謝宗霖Issue date 2020/11/24 Patent No 10,847,623
31Semiconductor device and method for manufacturing the same顏智洋/呂芳諒/劉致為Issue date 2020/10/13 Patent No 10,804,180
32Method for reducing Schottky barrier height and semiconductor device with reduced Schottky barrier height鄭鴻祥Issue date 2020/10/06 Patent No 10,797,137
332D crystal hetero-structures and manufacturing methods thereof林時彥/陳冠超/李嗣涔Issue date 2020/09/22 Patent No 10,784,351 Issue date 01/11/2023 Patent No I789380
34Semiconductor device having boron-doped germanium tin epitaxy structure and method for forming the same蔡仲恩/呂芳諒/陳品翔/劉致為Issue date 2020/09/15 Patent No 10,777,663
35Material having single crystal perovskite, device including the same, and manufacturing method thereof楊博宇/盧冠傑/鄭兆凱/林延勳/萬獻文/林耕雍/郭瑞年/洪銘輝Issue date 2020/08/25 Patent No 10,755,924 Issue date 2021/01/01 Patent No I714772 Issue date 2021/05/25 Patent No 107447254
36Stacked vertically isolated MOSFET structure and method of forming the same黃郁翔/葉泓佑/黃文宏/劉致為Issue date 2020/08/18 Patent No 10,748,935
37Semiconductor device and manufacturing method thereof楊博宇/林延勳/萬獻文/林耕雍/郭瑞年/洪銘輝Issue date 2020/08/18 Patent No 10,748,774
38Semiconductor device and manufacturing method thereof吳肇欣/張立成/戴承家/楊舜丞Issue date 2020/07/28 Patent No 10,727,328
39Semiconductor device and manufacturing methods thereof廖宇鴻/樊聖亭/李敏鴻/劉致為Issue date 2020/06/16 Patent No 10,686,072 Issue date 2021/02/01 Patent No I717528 Issue date 2022/10/25 Patent No 108231873
40Device with doped phosphorene and method for doping phosphorene林佑明/吳肇欣/張洵銘 Issue date 2020/05/19 Patent No 10,658,470
41Charge storage and sensing devices and methods胡振國/廖建舜/高偉智 Issue date 2020/05/12 Patent No 10,651,300
42Forming semiconductor structures with two-dimensional materials林時彥/陳璿安/李嗣涔Issue date 2020/01/21 Patent No 10,541,132
43Semiconductor device and manufacturing method thereof呂芳諒/彭裕鈞/鍾嘉哲/劉致為Issue date 2020/01/14 Patent No 10,535,737
44Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operation, and memory device including the same 胡振國/楊昶豐/林浩雄Issue date 2019/12/24 Patent No 10,515,998
45Method for forming stressor, semiconductor device having stressor, and method for forming the same林浩雄/楊哲維Issue date 2019/12/24 Patent No 10,516,050 Issue date 2022/05/11 Patent No I763691 Issue date 2022/06/14 Patent No 107665919
46Semiconductor device and manufacturing method thereof呂芳諒/翁翊軒/林詩雅/劉致為Issue date 2019/12/17 Patent No 10,510,888 Issue date 2022/03/11 Patent No I757373 Issue date 2021/09/14 Patent No 108122754
47Forming semiconductor structures with semimetal features楊哲維/林浩雄Issue date 2019/12/10 Patent No 10,504,999
48Design-for-test for asynchronous circuit elements黃觀晏/沈庭宇/李建模Issue date 2019/10/01 Patent No 10,429,440
49Semiconductor devices comprising 2D-materials and methods of manufacture thereof 林時彥/吳崇榮/張翔睿Issue date 2019/09/03 Patent No 10,403,744 Issue date 2019/05/23 Patent No 10-1983876
50Semiconductor memory device 胡振國/廖建舜/曾冠豪Issue date 2019/08/13 Patent No 10,381,353
51Method for direct forming stressor, semiconductor device having stressor, and method for forming the same林浩雄/楊哲維Issue date 2019/07/09 Patent No 10,347,538
52Semiconductor device having stressor layer劉致為/藍偟翔/黃仕賢/蔡仲恩/劉繼文Issue date 2019/07/02 Patent No 10,340,383 Issue date 2022/03/11 Patent No I757272 Issue date 2022/04/19 Patent No 107230729
53Semiconductor device and manufacturing method thereof翁翊軒/呂芳諒/蔡仲恩/藍偟翔/劉致為Issue date 2019/06/25 Patent No 10,332,985 Issue date 2020/01/01 Patent No I681463 Issue date 2021/11/02 Patent No 109427593
54Single-crystal rare earth oxide grown on III-V compound陳冠雄/洪銘輝/郭瑞年/林延勳/吳紹筠Issue date 2019/05/07 Patent No 10,283,349
55Metallic channel device and manufacturing method thereof陳敏璋/鄭柏賢Issue date 2019/04/23 Patent No 10,269,982
56Multi-channel field effect transistors using 2D-material陳品翔/張弘志/劉致為Issue date 2019/04/23 Patent No 10,269,981
57 HEMTs with an AlxGa1-xN barrier layer grown by plasma enhanced atomic layer deposition陳敏璋/施奐宇Issue date 2019/04/23 Patent No 10,269,923
58Method of forming a semiconductor device using layered etching and repairing of damaged portions林時彥/陳冠超/吳崇榮/屈統威/李嗣涔Issue date 2019/04/23 Patent No 10,269,564
59Asynchronous pipeline circuit 賴奕翔/施淳浤/江介宏Issue date 2018/12/18 Patent No 10,157,249
60Method of manufacturing a FET using a two dimensional transition metal dichalcogenide including a low power oxygen plasma treatment林時彥/吳崇榮/陳冠超Issue date 2018/12/04 Patent No 10,147,603
61Field effect transistor using transition metal dichalcogenide and a method for manufacturing the same吳育任/陳爍帆Issue date 2018/11/27 Patent No 10,141,412
62Semiconductor device and method 樊聖亭/陳品翔/劉致為Issue date 2018/10/23 Patent No 10,109,477 Issue date 2018/10/01 Patent No I637429 Issue date 2020/05/12 Patent No 107039280
63Semiconductor device including field effect transistor and a method for fabricating the same劉致為/呂芳諒/黃仕賢/翁翊軒Issue date 2018/09/04 Patent No 10,068,995
64Negative capacitance field effect transistor with charged dielectric material 賴德全/沈育誠/李敏鴻/劉致為Issue date 2018/05/22 Patent No 9,978,868
65Method for non-resist nanolithography陳敏璋/蔡坤諭/劉致為Issue date 2018/05/15 Patent No 9,972,702
66Antifuse array and method of forming antifuse using anodic oxidation胡振國/田維誠/潘正聖/王昭雄/劉繼文Issue date 2018/04/24 Patent No 9,953,989
67Graphene transistor and related methods劉尚奕/吳志毅/程琮欽Issue date 2018/04/10 Patent No 9,941,380 Issue date 2020/11/11 Patent No I710065
68Charged-particle-beam patterning without resist蔡坤諭/陳敏璋 Issue date 2018/04/03 Patent No 9,934,969 Issue date 2016/07/11 Patent No I541860 Issue date 2018/09/11 Patent No 104821274
69Methods of graphene growth and related structures陳敏璋/謝忠諺Issue date 2018/03/20 Patent No 9,923,142
70Semiconductor device and method of formation廖洺漢Issue date 2018/03/13 Patent No 9,917,169 Issue date 2019/07/19 Patent No 105280689
71Semiconductor device with transition metal dichalocogenide hetero-structure林時彥/吳崇榮/張翔睿 Issue date 2018/02/20 Patent No 9,899,537
72Semiconductor devices comprising 2D-materials and methods of manufacture thereof 林孟佑/林時彥/李嗣涔Issue date 2018/01/02 Patent No 9,859,115 Issue date 2021/05/11 Patent No 105895502
73Semiconductor device and formation thereof 陳彥廷/翁翊軒/劉致為Issue date 2017/12/19 Patent No 9,847,233
74Methods of forming an interconnect structure using a self-ending anodic oxidation胡振國/田維誠/潘正聖/王昭雄/劉繼文Issue date 2017/11/07 Patent No 9,812,395
75Method for fabricating a fine structure陳敏璋/鄭柏賢Issue date 2017/09/26 Patent No 9,773,662
76Double exponential mechanism controlled transistor胡振國/廖建舜Issue date 2017/08/29 Patent No 9,748,379
77One-dimensional nanostructure growth on graphene and devices thereof林浩雄/楊哲維Issue date 2017/07/18 Patent No 9,711,607
78Semiconductor device and transistor顏智洋/賴德全/劉致為Issue date 2017/06/13 Patent No 9,679,893 Issue date 2019/08/09 Patent No 106158934
79Semiconductor device and method of manufacture高振宏/陳敏璋/楊博軒Issue date 2017/05/30 Patent No 9,666,441
80Three-dimensional transistor and methods of manufacturing thereof 顏智洋/葉泓佑/張達智/劉致為Issue date 2017/04/18 Patent No 9,627,411
81Semiconductor device structure and method 梁啟德/洪銘輝/劉泛鴻Issue date 2017/04/11 Patent No 9,620,605 Issue date 2019/04/23 Patent No 106158858
82MOS devices with ultra-high dielectric constants and methods of forming the same廖洺漢 (洪銘輝)Issue date 2017/04/04 Patent No 9,614,079
83Semiconductor device structure and method for forming the same林時彥/吳崇榮Issue date 2017/02/21 Patent No 9,577,049
84Logic circuit and system and computer program product for logic synthesis 江介宏/莊紀銓/賴奕翔Issue date 2017/02/21 Patent No 9,576,094
85Projection patterning with exposure mask蔡坤諭/陳敏璋 Issue date 2017/02/14 Patent No 9,570,301
86Field effect transistors and methods of forming same翁翊軒/葉泓佑/劉致為Issue date 2017/01/31 Patent No 9,559,209
87Field effect transistors and methods of forming same賴德全/陳品翔/張弘志/劉致為Issue date 2017/01/31 Patent No 9,559,168
88Systems and methods for forming nanowires using anodic oxidation田維誠/胡振國/曾柏皓Issue date 2016/12/27 Patent No 9,528,194
89Semiconductor device and method of formation林孟佑/林時彥/李嗣涔Issue date 2016/12/20 Patent No 9,525,072 Issue date 2020/01/14 Patent No 106206680 Issue date 2017/03/15 Patent No 10-1716938
90RRAM devices黃義仁/李嗣涔Issue date 2016/12/20 Patent No 9,525,008
91Field effect transistors and methods of forming same陳品翔/樊聖亭/劉致為Issue date 2016/11/08 Patent No 9,490,430
92Transistor with wurtzite channel張弘志/陳品翔/劉致為Issue date 2016/08/23 Patent No 9,425,250
93Tunnel MOSFET with ferroelectric gate stack李敏鴻Issue date 2016/07/12 Paten No 9,391,162
94Semiconductor device having a charged insulating layer陳彥瑜/林軒毅/劉致為Issue date 2016/02/16 Patent No 9,263,542
953D UTB transistor using 2D-material channels 張弘志/陳品翔/劉致為Issue date 2016/01/19 Patent No 9,240,478
96Using molecular beam epitaxy in a semiconductor structure with a high K/GaSb interface朱瑞霖/洪銘輝/郭瑞年/皮敦文/綦振瀛Issue date 2015/12/15 Patent No 9,214,518