| 1 | Recent progress in undoped group-IV heterostructures for quantum technologies | Chia-Tse Tai and Jiun-Yun Li (李峻霣) | Materials for Quantum Technology | Volume 4 |
| 2 | Study and Optimization of Two-State Transient Currents at Millisecond Time Scales in MIS Tunnel Diodes | Sung-Wei Huang and Jenn-Gwo Hwu (胡振國) | IEEE Transactions on Electron Devices | Volume 70 |
| 3 | Improved Scalability of Negative Capacitance Junctionless Transistors with Underlap Design | M. Gupta and V. P.-H. Hu (胡璧合) | IEEE Transactions on Electron Devices | Volume 70 |
| 4 | Fatigue Mechanism of Antiferroelectric Hf0.1Zr0.9O2 Toward Endurance Immunity by Opposite Polarity Cycling Recovery (OPCR) for eDRAM | K.-Y. Hsiang, J.-Y. Lee, Z.-F. Lou, F.-S. Chang, Y.-C. Chen, Z.-X. Li, M. H. Liao, C. W. Liu, T.-H. Hou, P. Su, and M. H. Lee (李敏鴻) | IEEE Transactions on Electron Devices | Volume 70 |
| 5 | Three-Level MIS Antifuse Formed by Polarity-Dependent Dielectric Breakdown on 3.5 nm SiO2 for One-Time Programmable Application | Sung-Wei Huang and Jenn-Gwo Hwu (胡振國) | IEEE Transactions on Electron Devices | Volume 70 |
| 6 | Atomic layer engineering on resistive switching in sub-4 nm AlN resistive random access memory | Chen-Hsiang Ling, Chi-Lin Mo, Chun-Ho Chuang, Jing-Jong Shyue, and Miin-Jang Chen(陳敏璋) | Journal of Materials Chemistry C | |
| 7 | Impact of monolayer engineering on ferroelectricity of sub-5 nm Hf0.5Zr0.5O2 thin films | Ting-Yun Wang, Chi-Lin Mo, Chun-Yi Chou, Chun-Ho Chuang, and Miin-Jang Chen(陳敏璋) | Acta Materialia | Volume 250 |
| 8 | Wake-up-free ferroelectric Hf0.5Zr0.5O2 thin films characterized by precession electron diffraction | Teng-Jan Chang, Hsing-Yang Chen, Chin-I Wang, Hsin-Chih Lin, Chen-Feng Hsu, Jer-Fu Wang, Chih-Hung Nien, Chih-Sheng Chang, Iuliana P. Radu, and Miin-Jang Chen(陳敏璋) | Acta Materialia | Volume 246 |
| 9 | Inhibitor-Free Area-Selective Atomic Layer Deposition with Feature Size Down to Nearly 10 nm | Chun-Yi Chou, Chi-Lin Mo, Chih-Piao Chuu, Ting-Yun Wang, Chin-Chao Huang, Cheng-Hung Hou, Chun-Ho Chuang, Yu-Sen Jiang, Jing-Jong Shyue, and Miin-Jang Chen(陳敏璋) | Chemistry of Materials | Volume 35 |
| 10 | Room-Temperature Negative Differential Resistance and High Tunneling Current Density in GeSn Esaki Diodes | Chia-You Liu, Kai-Ying Tien, Po-Yuan Chiu, Yu-Jui Wu, Yen Chuang, Hsiang-Shun Kao, and Jiun-Yun Li (李峻霣) | Advanced Materials | Volume 34 |
| 11 | Dielectric Layer Design of Bilayer Ferroelectric and Antiferroelectric Tunneling Junctions Toward 3D NAND-Compatible Architecture | K.-Y. Hsiang, C.-Y. Liao, J.-H. Liu, C.-Y. Lin, J.-Y. Lee, Z.-F. Lou, F.-S. Chang, W.-C. Ray, Z.-X. Li, H.-C. Tseng, C.-C. Wang, M. H. Liao, T.-H. Hou, and M. H. Lee (李敏鴻) | IEEE Electron Device Letter | Volume 43 |
| 12 | Mechanisms of instability retention for ferroelectric field effect transistors with HfZrO2 gate stack scaling down | Chun-Yu Liao, Chen-Ying Lin, Zhi-Xian Li, Kuo-Yu Hsiang, Zhao-Feng Lou, Vita Pi-Ho Hu(胡璧合), and Min-Hung Lee (李敏鴻) | Applied Physics Letters | Volume 121 |
| 13 | Ferroelectric ZrO2 ultrathin films on silicon for metal-ferroelectric-semiconductor capacitors and transistors | Yu-Sen Jiang, Kuei-Wen Huang, Sheng-Han Yi, Chin-I Wang, Teng-Jan Chang, Wei-Chung Kao, Chun-Yuan Wang, Yu-Tung Yin, Jay Shieh, Miin-Jang Chen (陳敏璋) | 2022 Journal of the European Ceramic Society | Volume 42 |
| 14 | Improved Two States Characteristics in MIS Tunnel Diodes by Oxide Local Thinning Enhanced Transient Current Behavior | Sung-Wei.Huang and Jenn-Gwo Hwu (胡振國) | IEEE Transactions on Electron Devices | Volume 69 |
| 15 | Strain Effects On Rashba Spin-Orbit Coupling Of Two-Dimensional Hole Gases In Gesn/Ge Heterostructures | Chia-Tse Tai, Po-Yuan Chiu, Chia-You Liu, Hsiang-Shun Kao, C. T. Harris, T. M. Lu, C. T. Hsieh, S. W. Chang, and Jiun-Yun Li (李峻霣) | Advanced Materials | Volume 33 |
| 16 | Ultralow Contact Resistance Between Semimetal And Monolayer Semiconductors | Pin-Chun Shen, Cong Su, Yuxuan Lin, Ang-Sheng Chou, Chao-Ching Cheng, Ji-Hoon Park, Ming-Hui Chiu, Ang-Yu Lu, Hao-Ling Tang, Mohammad Mahdi Tavakoli, Gregory Pitner, Xiang Ji, Zhengyang Cai, Nannan Mao, Jiangtao Wang, Vincent Tung, Ju Li, Jeffrey Bokor, Alex Zettl, Chih-I Wu (吳志毅), Tomás Palacios1, Lain-Jong Li, Jing Kong | Nature | Volume 593 |
| 17 | Capacitance Matching By Optimizing The Geometry Of A Ferroelectric Hfo2-Based Gate For Voltage Amplification | K.-T. Chen, K.-Y. Hsiang, C.-Y. Liao, S.-H. Chang, F.-C. Hsieh, J.-H. Liu, S.-H. Chiang, H. Liang, S. T. Chang (張書通), M. H. Lee (李敏鴻) | Journal of Computational Electronics | |
| 18 | Multibit Ferroelectric Fet Based On Nonidentical Double Hfzro2 For High-Density Nonvolatile Memory | C.-Y. Liao, K.-Y. Hsiang, F.-C. Hsieh, S.-H. Chiang, S.-H. Chang, J.-H. Liu, C.-F. Lou, C.-Y. Lin, T.-C. Chen, C.-S. Chang, and M. H. Lee (李敏鴻) | IEEE Electron Device Letters | Volume 42 |
| 19 | Sub-7-Nm Textured Zro2 With Giant Ferroelectricity | Kuei-Wen Huang, Sheng-Han Yi, Yu-Sen Jiang, Wei-Chung Ka, Yu-Tung Yin, David Beck, Vladimir Korolkov, Roger Proksch, Jay Shien, Miin-Jang Chen (陳敏璋) | Acta Materialia | Volume 205 |
| 20 | Ferroelectric Undoped-Hfox Capacitor With Symmetric Synaptic For Neural Network Accelerator | Jun-Dao Luo, Yu-Ying Lai, Kuo-Yu Hsiang, Chia-Feng Wu, Yun-Tien Yeh, Hao-Tung Chung, Yi-Shao Li, Kai-Chi Chuang, Wei-Shuo Li, Chun-Yu Liao, Pin-Guang Chen, Kuan-Neng Chen, Min-Hung Lee (李敏鴻), and Huang-Chung Cheng | IEEE Transactions on Electron Devices | Volume 68 |
| 21 | Enhanced Electrical Performance Of Van Der Waals Heterostructure | Lei Xu, Yun-Yuan Wang, Chih-Hsiang Hsiao, I-Chih Ni, Mei-Hsin Chen, and Chih-I Wu (吳志毅) | Advanced Materials Interfaces | Volume 8 |
| 22 | Operation Bandwidth Of Negative Capacitance Characterized By Frequency Response Of Capacitance Magnification In Ferroelectric/Dielectric Stacks | Yu-Sen Jiang, Yu-En Jeng, Yu-Tung Yin, Kuei-Wen Huang, Teng-Jan Chang, Chin-I Wang, Yu-Ting Chao, Chao-Hsin Wu, and Miin-Jang Chen (陳敏璋) | Journal of Materials Chemistry C | Volume 9 |
| 23 | Simulation On The Electric Field Effect Of Bi Thin Film | Lee-Chi Hong, Cheih Chou, and Hao-Hsiung Lin (林浩雄) | Solid State Electronics Letters | Volume 2 |
| 24 | Hole Mobility Calculation For Monolayer Molydenum Tungsten Alloy Disulfide | Ming-Ting Wu, Cheng-Hsien Yang, Yun-Fang Chung, Kuan-Ting Chen, and Shu-Tong Chang (張書通) | Journal of Nanoscience and Nanotechnology | Volume 20 |
| 25 | Random Polarization Distribution Of Multi-Domain Model For Polycrystalline Ferroelectric Hfzro2 | K.-T. Chen, C.-Y. Liao, K.-Y. Hsiang, S.-H. Chang, F.-J. Hsieh, H. Liang, S.-H. Chiang, J.-H. Liu, K.-S. Li, S. T. Chang(張書通), and M. H. Lee (李敏鴻) | Semiconductor Science and Technology | Volume 35 |
| 26 | Paraelectric /Antiferroelectric/Ferroelectric Phase Transformation In As-Deposited Zro2 Thin Films By The Tin Capping Engineering | Chun-Yuan Wang, Chin-I Wang, Sheng-Han Yi, Teng-Jan Chang, Chun-Yi Chou, Yu-Tung Yin, Makoto Shiojiri, and Miin-Jang Chen (陳敏璋) | Materials and Design | Volume 195 |
| 27 | Coupling Sensitivity In Concentric Metal-Insulator-Semiconductor Tunnel Diodes By Controlling The Lateral Injection Electrons | Kung-Chu Chen, and Jenn-Gwo Hwu (胡振國) | AIP Advances | Volume 10 |
| 28 | Sub-Nanometer Heating Depth Of Atomic Layer Annealing | Wei-Hao Lee, Wei-Chung Kao, Yu-Tung Yin, Sheng-Han Yi, Kuei-Wen Huang, Hsin-Chih Lin, and Miin-Jang Chen (陳敏璋) | Applied Surface Science | Volume 525 |
| 29 | Forming-Free, Nonvolatile, And Flexible Resistive Random-Access Memory Using Bismuth Iodide/Van Der Waals Materials Heterostructures | Chia-Shuo Li, Sheng-Wen Kuo, Yu-Tien Wu, Fang-Yu Fu, I-Chih Ni, Mei-Hsin Chen, and Chih-I Wu (吳志毅) | Advanced Materials Interfaces | Volume 7 |
| 30 | Low Contact Resistivity To Ge Using In-Situ B And Sn Incorporation By Chemical Vapor Deposition | Chung-En Tsai, Fang-Liang Lu, Yi-Chun Liu, Hung-Yu Ye, and C. W. Liu (劉致為) | IEEE Transactions on Electron Devices | Volume 67 |
| 31 | Studies Of 2D Bulk And Nanoribbon Band Structures In Moxw1–Xs2 Alloy System Using Full Sp3D5 Tight‐Binding Model | Tsung-Yin Tsai, Pin-Fang Chen, Shu-Wei Chang, and Yuh-Renn Wu (吳育任) | Physica Status Solidi (b) | Volume 258 |
| 32 | Ferroelectric Hfzro2 With Electrode Engineering And Stimulation Schemes As Symmetric Analog Synaptic Weight Element For Deep Neural Network Training | K.-Y. Hsiang, C.-Y. Liao, K.-T. Chen, Y.-Y. Lin, C.-Y. Chueh, C. Chang, Y.-J. Tseng, Y.-J. Yang, S. T. Chang(張書通), M.-H. Liao, T.-H. Hou, C.-H. Wu, C.-C. Ho, J.-P. Chiu, C.-S. Chang, and M. H. Lee (李敏鴻) | IEEE Transactions on Electron Devices | Volume 67 |
| 33 | Optical Detection Of Parasitic Channels Of Vertically Stacked Ge0.98Si0.02 Ngaafets | Shih-Ya Lin, Hsiao-Hsuan Liu, Chien-Te Tu, Yu-Shiang Huang, Fang-Liang Lu, and C. W. Liu (劉致為) | IEEE Transactions on Electron Devices | Volume 67 |
| 34 | Edge-Etched Al2O3 Dielectric As Charge Storage Region In A Coupled Mis Tunnel Diode Sensor | Bo-Jyun Chen and Jenn-Gwo Hwu (胡振國) | IEEE Journal of the Electron Devices Society | Volume 8 |
| 35 | Variational Quantum Circuits For Deep Reinforcement Learning | S. Y. Chen, C. H. Yang, J. Qi, P. Chen, X. Ma and H.-S. Goan (管希聖) | IEEE Access | Volume 8 |
| 36 | On-Current Enhancement In Treefet By Combining Vertically Stacked Nanosheets And Interbridges | Hung-Yu Ye and C. W. Liu (劉致為) | IEEE Electron Device Letters | Volume 41 |
| 37 | Full-Polaron Master Equation Approach To Dynamical Steady States Of A Driven Two-Level System Beyond The Weak System-Environment Coupling | C.-C. Chen, T. M. Stace, and H.-S. Goan (管希聖) | Physical Review B | Volume 102 |
| 38 | Luminescence Enhancement And Dual-Color Emission Of Stacked Mono-Layer 2D Materials | Po-Cheng Tsai, Hon-Chin Huang, Chun-Wei Huang, Shoou-Jinn Chang, and Shih-Yen Lin (林時彥) | Nanotechnology | Volume 31 |
| 39 | Analysis And Optimization Of Gan Based Multi-Channels Finfets | Chun-Lin Yu, Chih-Hao Lin, and Yuh-Renn Wu (吳育任) | IEEE Transactions on Nanotechnology | Volume 19 |
| 40 | Prolonged Transient Behavior In Ultra-Thin Oxide Mis-Tunneling Diode Induced By Deep Depletion Of Surrounded Coupling Electrode | Ting-Hao Hsu and Jenn-Gwo Hwu (胡振國) | IEEE Transactions on Electron Devices | Volume 67 |
| 41 | Improved Low-Voltage Sensing Performance In Mis(P) Tunnel Diodes By Oxide Thickening At The Gate Fringe | Kuan-Wun Lin and Jenn-Gwo Hwu (胡振國) | IEEE Transactions on Electron Devices | Volume 67 |
| 42 | Tungsten Diselenide Top-Gate Transistors With Multilayer Antimonene Electrodes: Gate Stacks And Epitaxially Grown 2D Material Heterostructures | Yu-Wei Zhang, Jun-Yan Li, Chao-Hsin Wu (吳肇欣), Chiao-Yun Chang, Shu-Wei Chang (張書維), Min-Hsiung Shih and Shih-Yen Lin (林時彥) | Scientific Reports | Volume 10 |
| 43 | Atomic Layer Densification Of Aln Passivation Layer On Epitaxial Ge For Enhancement Of Reliability And Electrical Performance Of High-K Gate Stacks | Chin-I Wang, Teng-Jan Chang, Yu-Tung Yin, Yu-Sen Jiang, Jing-Jong Shyue and Miin-Jang Chen (陳敏璋) | ACS Applied Electronic Materials | Volume 2 |
| 44 | Ultra-Low Subthreshold Swing In Gated Mis(P) Tunnel Diodes With Engineered Oxide Local Thinning Layers | Tzu-Hao Chiang and Jenn-Gwo Hwu (胡振國) | IEEE Transactions on Electron Devices | Volume 67 |
| 45 | Correlation Between Ferroelectricity And Nitrogen Incorporation Of Undoped Hafnium Dioxide Capacitor | Jun-Dao Luo, Yun-Tien Yeh, Yu-Ying Lai, Chia-Feng Wu, Hao-Tung Chung, Yi-Shao Li, Kai-Chi Chuang, Wei-Shuo Li, Pin-Guang Chen, Min-Hung Lee (李敏鴻), and Huang-Chung Cheng | Vacuum | Volume 176 |
| 46 | Van Der Waals Epitaxy Of Large-Area And Single-Crystalline Gold Films On Mos2 For Low-Contact-Resistance 2D-3D Interfaces | Kuan-Chao Chen, Syuan-Miao Lai, Bo-Yu Wu, Chi Chen, and Shih-Yen Lin (林時彥) | ACS Applied Nano Materials | Volume 3 |
| 47 | Size-Dependent Switching Properties Of Spin-Orbit Torque Mram With Manufacturing-Friendly 8-Inch Wafer-Level Uniformity | Sk Ziaur Rahaman, I-Jung Wang, Ding-Yeong Wang, Chi-Feng Pai, Yu-Chen Hsin, Shan-Yi Yang, Hsin-Han Lee, Yao-Jen Chang, Yi-Ching Kuo, Yi-Hui Su, Guan-Long Chen, Fang-Ming Chen, Jeng-Hua Wei, Tuo-Hung Hou, Shyh-Shyuan Sheu, Chih-I Wu (吳志毅), and Duan-Lee Deng | IEEE Journal of the Electron Devices Society | Volume 8 |
| 48 | Thermoelectric Transport Of The Half-Filled Lowest Landau Level In A P-Type Ge/Sige Heterostructure | Xiaoxue Liu, Tzu-Ming Lu, Charles Thomas Harris, Fang-Liang Lu, Chia-You Liu, Jiun-Yun Li, C. W. Liu (劉致為) and Rui-Rui Du | Physical Review B | Volume 101 |
| 49 | Low- Temperature Crystallization And Paraelectric-Ferroelectric Phase Transformation In Nanoscale Zro2 Thin Films Induced By Atomic Layer Plasma Treatment | Sheng-Han Yi, Kuei-Wen Huang, Hsin-Chih Lin and Miin-Jang Chen (陳敏璋) | Journal of Materials Chemistry C | Volume 8 |
| 50 | Topological Transition In A 3Nm Thick Al Film Grown By Molecular Beam Epitaxy | Ankit Kumar,Guan-Ming Su, Chau-Shing Chang, Ching-Chen Yeh, Bi-Yi Wu, Dinesh K. Patel, Yen-Ting Fan, Sheng-Di Lin, Lee Chow, and Chi-Te Liang (梁啟德) | Journal of Nanomaterials | Volume 2019 |
| 51 | Different Infrared Responses From The Stacked Channels And Parasitic Channel Of Stacked Gesn Channel Transistors | Hisao-Hsuan Liu, Yu-Shiang Huang, Fang-Liang Lu, Hung-Yu Ye, and C. W. Liu (劉致為) | IEEE Electron Device Letters | Volume 41 |
| 52 | Self-Heating Induced Interchannel Vt Difference Of Vertically Stacked Si Nanosheet Gate-All-Around Mosfets | Chia-Che Chung, Hung-Yu Ye, H. H. Lin, W. K. Wan, M.-T. Yang, and C. W. Liu (劉致為) | IEEE Electron Device Letters | Volume 40 |
| 53 | Carrier Mobility Calculation For Monolayer Black Phosphorous | Kuan-Ting Chen, Min-Hsin Hsieh, Yen-Shuo Su, Wen-Jay Lee, and Shu-Tong Chang (張書通) | Journal of Nanoscience and Nanotechnology | Volume 19 |
| 54 | Multi-Layer Elemental 2D Materials: Antimonene, Germanene And Stanene Grown Directly On Molybdenum Disulfides | Kuan-Chao Chen, Lun-Ming Lee, Hsuan-An Chen, Hsu Sun, Cheng-Lun Wu, Hsin-An Chen, Kuan-Bo Lin, Yen-Chun Tseng, Chao-Cheng Kaun, Chun-Wei Pao, and Shih-Yen Lin (林時彥) | Semiconductor Science and Technology | Volume 34 |
| 55 | Non-Markovianity, Information Backflow, And System-Environment Correlation | Yun-Yi Hsieh, Zheng-Yao Su, and Hsi-Sheng Goan (管希聖) | Physical Review A | Volume 100 |
| 56 | Evaluation Of Sweep Modes For Switch Response On Ferroelectric Negative Capacitance Fets | Kuan-Ting Chen, Yu-Chen Chou, Gao-Yu Siang, Hong-Yu Chen, Chieh Lo, Chun-Yu Liao, Shu-Tong Chang (張書通), and Min-Hung Lee (李敏鴻) | Applied Physics Express | Volume 12 |
| 57 | Low-Temperature Conformal Atomic Layer Etching Of Si With A Damage-Free Surface For Next Generation Atomic-Scale Electronic | Po-Hsien Cheng, Chin-I Wang, Chen-Hsiang Ling, Chen-Hsuan Lu, Yu-Tung Yin, Miin-Jang Chen(陳敏璋) | ACS Applied Nano Materials | Volume 2 |
| 58 | Thermal Spice Modeling Of Finfet And Beol Considering Frequency-Dependent Transient Response, 3-D Heat Flow, Boundary/Alloy Scattering, And Interfacial Thermal Resistance | C.-C. Chung, H. H. Lin, W. K. Wan, M.-T. Yang, and C. W. Liu (劉致為) | IEEE Transactions on Electron Devices | Volume 66 |
| 59 | Roles Of Inner And Outer Fringe And Asymmetric Coupling Effect In Concentric Double-Mis(P) Tunneling Diodes | Yu-Hsuan Chen and Jenn-Gwo Hwu (胡振國) | ECS Transactions | Volume 89 |
| 60 | High-Fidelity And Robust Two-Qubit Gates For Quantum-Dot Spin Qubits In Silicon | C.-H. Huang, C. H. Yang, C.-C. Chen, A. S. Dzurak, and H.-S. Goan (管希聖) | Physical Review A | Volume 99 |
| 61 | Negative Capacitance From The Inductance Of Ferroelectric Switching | Po-Hsien Cheng, Yu-Tung Yin, I-Na Tsai, Chen-Hsuan Lu, Lain-Jong Li, Samuel C. Pan, Jay Shieh, Makoto Shiojiri, and Miin-Jang Chen (陳敏璋) | Nature Communications Physics | Volume 2 |
| 62 | Single And Double Hole Quantum Dots In Strained Ge/Sige Quantum Wells | W. J. Hardy, C. T. Harris, Y. H. Su, Y. Chuang, J. Moussa, L. N. Maurer, Jiun-Yun Li (李峻霣), T. M. Lu, and D. R. Luhman | Nanotechnology | Volume 30 |
| 63 | The Atomic Layer Etching Mechanisms Of Molybdenum Disulfides By Using Oxygen Plasma | Kuan-Chao Chen, Chia-Wei Liu, Chi Chen and Shih-Yen Lin (林時彥) | Semiconductor Science and Technology | Volume 34 |
| 64 | Quantum Phase Transition In Ultrahigh Mobility Sige/Si/Sige Two-Dimensional Electron System | M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov, Amy Y. X. Zhu, S. V. Kravchenko, S.-H. Huang, and C. W. Liu (劉致為) | Physical Review B | Volume 99 |
| 65 | Non-Volatile Ferroelectric Fets Using 5-Nm Hf0.5Zr0.5O2 With High Data Retention And Read Endurance For 1T Memory Applications | K.-T. Chen, R.-C. Hong, C.-Y. Liao, H.-Y. Chen, S.-S. Gu, Z.-Y. Wang, Y.-C. Chou, S.-Y. Chen, G.-Y. Siang, J. Le, M.-H. Liao, K.-S. Li, S. T. Chang(張書通), and M. H. Lee (李敏鴻) | IEEE Electron Device Letters | Volume 40 |
| 66 | Electron Mobility Enhancement In An Undoped Si/Sige Heterostructure By Remote Carrier Screening | Y. H. Su, K. Y. Chou, Y. Chuang, T. M. Lu, and Jiun-Yun Li (李峻霣) | Journal of Applied Physics | Volume 125 |
| 67 | Photoresponse Of Homostructure Wse2 Rectifying Diode | T. H. Peng, C. H. Hong, M. R. Tang, and S. C. Lee (李嗣涔) | AIP Advances | Volume 9 |
| 68 | Effects Of Annealing Temperature And Nitrogen Content On Effective Work Function Of Tungsten Nitride | Chih-Hsiung Huang, Chung-En Tsai, Yu-Rui Chen, and C. W. Liu (劉致為) | IEEE Electron Device Letters | Volume 40 |
| 69 | Two Capacitance States Memory Characteristic In Metal-Oxide-Semiconductor (Mos) Structure Controlled By An Outer Mos Gate Ring | Hao-Jyun Li, Chang-Feng Yang and Jenn-Gwo Hwu (胡振國) | IEEE Transactions on Electron Devices | Volume 66 |
| 70 | Gate Oxide Local Thinning Mechanism Induced Sub-60 Mv/Decade Subthreshold Swing On Charge-Coupled Mis(P) Tunnel Transistor | Chang-Feng Yang , Bo-Jyun Chen, Wei-Chen Chen, Kuan-Wun Lin, and Jenn-Gwo Hwu (胡振國) | IEEE Transactions on Electron Devices | Volume 66 |
| 71 | Enhanced Two States Current In Mos-Gated Mis Separate Write/Read Storage Device By Oxide Soft Breakdown In Remote Gate | Wei-Chen Chen, Chang-Feng Yang and Jenn-Gwo Hwu (胡振國) | IEEE Transactions on Nanotechnology | Volume 18 |
| 72 | Mobility Calculation Of Ge Nanowire Junctionless And Inversion-Mode Nanowire Nfets With Size And Shape Dependence | Hung-Yu Ye, Chia-Che Chung, and C. W. Liu (劉致為) | IEEE Transactions on Electron Devices | Volume 65 |
| 73 | Black Phosphorus With A Unique Rectangular Shape And Its Anisotropic Properties | Y. Hsiao, P. Y. Chang, K. L. Fan, N. C. Hsu, and S. C. Lee (李嗣涔) | AIP Advances | Volume 8 |
| 74 | 3D Self-Consistent Quantum Transport Simulation For Gaas Gate-All-Around Nanowire Field-Effect Transistor With Elastic And Inelastic Scattering Effects | Han-Wei Hsiao and Yuh-Renn Wu (吳育任) | Physica Status Solidi (a) | Volume 216 |
| 75 | Current Enhancement And Bipolar Current Modulation Of Top-Gate Transistors Based On Monolayer Mos2 On Three-Layer Wxmo1-Xs2 | Kuan-Chao Chen, Cing-Yu Jian, Yi-Jia Chen, Si-Chen Lee, Shu-Wei Chang (張書維), and Shih-Yen Lin (林時彥) | ACS Applied Materials & Interfaces | Volume 10 |