| 1 | Study on The Transient Behaviors of Concentric MIS Tunneling Diodes by Rapid Voltage Switching at Ring/Center and Read at Center/Ring | Chi-Yi Kao, Sung-Wei Huang, and Jenn-Gwo Hwu (胡振國) | IEEE Transactions on Electron Devices | Volume 72 |
| 2 | Ultra-high remnant polarization in wake-up-free ferroelectric thin films realized by atomic layer annealing | Chi-Lin Mo, Hsin-Chih Lin, Miin-Jang Chen (陳敏璋) | Acta Materialia | Volume 288 |
| 3 | Dielectric-Free Molybdenum Disulfide Transistors with In-plane Gates | Che-Jia Chang, Shih-Jie Chen, Tzu-Hsuan Chang (張子璿), Po-Tsung Lee, Shu-Wei Chang, and Shih-Yen Lin (林時彥) | ACS Applied Materials & Interfaces | Volume 17 |
| 4 | High-quality HfO2 high-K gate dielectrics deposited on highly oriented pyrolytic graphite via enhanced precursor atomic layer seeding | Yu-Tung Yin, Chin-Chao Huang, Po-Hao Chiu, Yu-Sen Jiang, Ju-Yu Hoo, Miin-Jang Chen (陳敏璋) | ACS Applied Electronic Materials | Volume 7 |
| 5 | Alternating multi-pulse atomic layer deposition for dopant tailoring in sub-10 nm ferroelectric thin films | Ting-Yun Wang, Chun-Ho Chuang, Chi-Lin Mo, Yu-Sen Jiang, Jing-Jong Shyue, Jay Shieh, Miin-Jang Chen (陳敏璋) | Materials Today Chemistry | Volume 43 |
| 6 | Probing Hf0.5Zr0.5O2 ferroelectricity: neutron reflectivity reveals critical interface effects | Hsing-Yang Chen, Chi-Lin Mo, Jing-Jong Shyue, Tzu-Yen Huang, Miin-Jang Chen (陳敏璋) | ACS Applied Materials & Interfaces | Volume 17 |
| 7 | Nonvolatile and Volatile Memory Fusion of Antiferroelectric-like Hafnium−Zirconium Oxide for Multi-Bit Access and Endurance >1012 Cycles by Alternating Polarity Cycling Recovery and Spatially Resolved Evolution | Cheng-Hong Liu, Kuo-Yu Hsiang, Zhi-Xian Li, Fu-Sheng Chang, Zhao-Feng Lou, Jia-Yang Lee, Chee Wee Liu, Pin Su, Tuo-Hung Hou, and Min-Hung Lee (李敏鴻) | ACS Applied Materials & Interfaces | Volume 17 |
| 8 | Polariton-Mediated Ultrafast Energy Transfer in a van der Waals Superlattice | Tzu-Yu Peng, Jason Lynch, Jing-Wei Yang, Yen-Yu Wang, Xing-Hao Lee, Ben R. Conran, Clifford McAleese, Deep Jariwala, Yu-Jung Lu (呂宥蓉) | ACS Nano | Volume 19 |
| 9 | High-Performance Transistors with Polycrystalline 2D Material Channels: The Influence of Gold Electrode Crystallinity and the Layer Number of Molybdenum Disulfide Channels | Che-Jia Chang, Pei-Zhi Huang, Kuan-Bo Lin, Tzu-Hsuan Chang (張子璿), Wei-Chen Tu, Chao-Cheng Kaun, and Shih-Yen Lin (林時彥) | Applied Surface Science | Volume 693 |
| 10 | Control of Current Polarity in Concentric Metal-Insulator-Semiconductor Tunnel Diode (MISTD) Structures by Designed Coupling Rings | Tai-Ming Kung and Jenn-Gwo Hwu (胡振國) | Applied Physics A | Volume 131 |
| 11 | Ferroelastic Domain Switching and Time-Resolved Negative Capacitance in Polar-Axis-Oriented Hf0.5Zr0.5O2 Grown by Atomic Layer Epitaxy | Yu-Sen Jiang, Wei-En Lin, Makoto Shiojiri, Yu-Tung Yin, Yu-Cheng Su, Chih-Hung Nien, Chen-Feng Hsu, Vincent Duen-Huei Hou, Chih-Sheng Chang, Iuliana Radu, Miin-Jang Chen (陳敏璋) | Small | Volume 21 |
| 12 | Identical Pulse with Opposite Polarity Assistance Detrapping─Arithmetic Progression (OPAD-AP) to Ideal Potentiation of FeFET for Synapse | Z.-F. Lou, C.-Y. Liao, K.-Y. Hsiang, Z.-H. Li, S.-H. Chang, T.-C. Chen and M. H. Lee (李敏鴻) | IEEE Transactions on Electron Devices | Volume 71 |
| 13 | Super-lamination HZO/ZrO2/HZO of Ferroelectric Memcapacitors with Morphotropic Phase Boundary (MPB) for High Capacitive Ratio and Non-destructive Readout | Z.-F. Lou, B.-R. Chen, K.-Y. Hsiang, Y.-T. Chang, C.-H. Liu, H.-C. Tseng, H.-T. Liao, P. Su, and M. H. Lee (李敏鴻) | IEEE Electron Device Letters | Volume 45 |
| 14 | Advancing vapor pressure prediction: A machine learning approach with directed message passing neural networks | Yen-Hsiang Lin, Hsin-Hao Liang, Shiang-Tai Lin,Yi-Pei Li (李奕霈) | Journal of the Taiwan Institute of Chemical Engineers | |
| 15 | Recent progress in undoped group-IV heterostructures for quantum technologies | Chia-Tse Tai and Jiun-Yun Li (李峻霣) | Materials for Quantum Technology | Volume 4 |
| 16 | Study and Optimization of Two-State Transient Currents at Millisecond Time Scales in MIS Tunnel Diodes | Sung-Wei Huang and Jenn-Gwo Hwu (胡振國) | IEEE Transactions on Electron Devices | Volume 70 |
| 17 | Improved Scalability of Negative Capacitance Junctionless Transistors with Underlap Design | M. Gupta and V. P.-H. Hu (胡璧合) | IEEE Transactions on Electron Devices | Volume 70 |
| 18 | Fatigue Mechanism of Antiferroelectric Hf0.1Zr0.9O2 Toward Endurance Immunity by Opposite Polarity Cycling Recovery (OPCR) for eDRAM | K.-Y. Hsiang, J.-Y. Lee, Z.-F. Lou, F.-S. Chang, Y.-C. Chen, Z.-X. Li, M. H. Liao, C. W. Liu, T.-H. Hou, P. Su, and M. H. Lee (李敏鴻) | IEEE Transactions on Electron Devices | Volume 70 |
| 19 | Three-Level MIS Antifuse Formed by Polarity-Dependent Dielectric Breakdown on 3.5 nm SiO2 for One-Time Programmable Application | Sung-Wei Huang and Jenn-Gwo Hwu (胡振國) | IEEE Transactions on Electron Devices | Volume 70 |
| 20 | Atomic layer engineering on resistive switching in sub-4 nm AlN resistive random access memory | Chen-Hsiang Ling, Chi-Lin Mo, Chun-Ho Chuang, Jing-Jong Shyue, and Miin-Jang Chen(陳敏璋) | Journal of Materials Chemistry C | |
| 21 | Impact of monolayer engineering on ferroelectricity of sub-5 nm Hf0.5Zr0.5O2 thin films | Ting-Yun Wang, Chi-Lin Mo, Chun-Yi Chou, Chun-Ho Chuang, and Miin-Jang Chen(陳敏璋) | Acta Materialia | Volume 250 |
| 22 | Wake-up-free ferroelectric Hf0.5Zr0.5O2 thin films characterized by precession electron diffraction | Teng-Jan Chang, Hsing-Yang Chen, Chin-I Wang, Hsin-Chih Lin, Chen-Feng Hsu, Jer-Fu Wang, Chih-Hung Nien, Chih-Sheng Chang, Iuliana P. Radu, and Miin-Jang Chen(陳敏璋) | Acta Materialia | Volume 246 |
| 23 | Inhibitor-Free Area-Selective Atomic Layer Deposition with Feature Size Down to Nearly 10 nm | Chun-Yi Chou, Chi-Lin Mo, Chih-Piao Chuu, Ting-Yun Wang, Chin-Chao Huang, Cheng-Hung Hou, Chun-Ho Chuang, Yu-Sen Jiang, Jing-Jong Shyue, and Miin-Jang Chen(陳敏璋) | Chemistry of Materials | Volume 35 |
| 24 | Room-Temperature Negative Differential Resistance and High Tunneling Current Density in GeSn Esaki Diodes | Chia-You Liu, Kai-Ying Tien, Po-Yuan Chiu, Yu-Jui Wu, Yen Chuang, Hsiang-Shun Kao, and Jiun-Yun Li (李峻霣) | Advanced Materials | Volume 34 |
| 25 | Dielectric Layer Design of Bilayer Ferroelectric and Antiferroelectric Tunneling Junctions Toward 3D NAND-Compatible Architecture | K.-Y. Hsiang, C.-Y. Liao, J.-H. Liu, C.-Y. Lin, J.-Y. Lee, Z.-F. Lou, F.-S. Chang, W.-C. Ray, Z.-X. Li, H.-C. Tseng, C.-C. Wang, M. H. Liao, T.-H. Hou, and M. H. Lee (李敏鴻) | IEEE Electron Device Letter | Volume 43 |
| 26 | Mechanisms of instability retention for ferroelectric field effect transistors with HfZrO2 gate stack scaling down | Chun-Yu Liao, Chen-Ying Lin, Zhi-Xian Li, Kuo-Yu Hsiang, Zhao-Feng Lou, Vita Pi-Ho Hu(胡璧合), and Min-Hung Lee (李敏鴻) | Applied Physics Letters | Volume 121 |
| 27 | Ferroelectric ZrO2 ultrathin films on silicon for metal-ferroelectric-semiconductor capacitors and transistors | Yu-Sen Jiang, Kuei-Wen Huang, Sheng-Han Yi, Chin-I Wang, Teng-Jan Chang, Wei-Chung Kao, Chun-Yuan Wang, Yu-Tung Yin, Jay Shieh, Miin-Jang Chen (陳敏璋) | 2022 Journal of the European Ceramic Society | Volume 42 |
| 28 | Improved Two States Characteristics in MIS Tunnel Diodes by Oxide Local Thinning Enhanced Transient Current Behavior | Sung-Wei.Huang and Jenn-Gwo Hwu (胡振國) | IEEE Transactions on Electron Devices | Volume 69 |
| 29 | Strain Effects On Rashba Spin-Orbit Coupling Of Two-Dimensional Hole Gases In Gesn/Ge Heterostructures | Chia-Tse Tai, Po-Yuan Chiu, Chia-You Liu, Hsiang-Shun Kao, C. T. Harris, T. M. Lu, C. T. Hsieh, S. W. Chang, and Jiun-Yun Li (李峻霣) | Advanced Materials | Volume 33 |
| 30 | Ultralow Contact Resistance Between Semimetal And Monolayer Semiconductors | Pin-Chun Shen, Cong Su, Yuxuan Lin, Ang-Sheng Chou, Chao-Ching Cheng, Ji-Hoon Park, Ming-Hui Chiu, Ang-Yu Lu, Hao-Ling Tang, Mohammad Mahdi Tavakoli, Gregory Pitner, Xiang Ji, Zhengyang Cai, Nannan Mao, Jiangtao Wang, Vincent Tung, Ju Li, Jeffrey Bokor, Alex Zettl, Chih-I Wu (吳志毅), Tomás Palacios1, Lain-Jong Li, Jing Kong | Nature | Volume 593 |
| 31 | Capacitance Matching By Optimizing The Geometry Of A Ferroelectric Hfo2-Based Gate For Voltage Amplification | K.-T. Chen, K.-Y. Hsiang, C.-Y. Liao, S.-H. Chang, F.-C. Hsieh, J.-H. Liu, S.-H. Chiang, H. Liang, S. T. Chang (張書通), M. H. Lee (李敏鴻) | Journal of Computational Electronics | |
| 32 | Multibit Ferroelectric Fet Based On Nonidentical Double Hfzro2 For High-Density Nonvolatile Memory | C.-Y. Liao, K.-Y. Hsiang, F.-C. Hsieh, S.-H. Chiang, S.-H. Chang, J.-H. Liu, C.-F. Lou, C.-Y. Lin, T.-C. Chen, C.-S. Chang, and M. H. Lee (李敏鴻) | IEEE Electron Device Letters | Volume 42 |
| 33 | Sub-7-Nm Textured Zro2 With Giant Ferroelectricity | Kuei-Wen Huang, Sheng-Han Yi, Yu-Sen Jiang, Wei-Chung Ka, Yu-Tung Yin, David Beck, Vladimir Korolkov, Roger Proksch, Jay Shien, Miin-Jang Chen (陳敏璋) | Acta Materialia | Volume 205 |
| 34 | Ferroelectric Undoped-Hfox Capacitor With Symmetric Synaptic For Neural Network Accelerator | Jun-Dao Luo, Yu-Ying Lai, Kuo-Yu Hsiang, Chia-Feng Wu, Yun-Tien Yeh, Hao-Tung Chung, Yi-Shao Li, Kai-Chi Chuang, Wei-Shuo Li, Chun-Yu Liao, Pin-Guang Chen, Kuan-Neng Chen, Min-Hung Lee (李敏鴻), and Huang-Chung Cheng | IEEE Transactions on Electron Devices | Volume 68 |
| 35 | Enhanced Electrical Performance Of Van Der Waals Heterostructure | Lei Xu, Yun-Yuan Wang, Chih-Hsiang Hsiao, I-Chih Ni, Mei-Hsin Chen, and Chih-I Wu (吳志毅) | Advanced Materials Interfaces | Volume 8 |